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BUK7675-55A_15

Description
N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET
File Size262KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7675-55A_15 Overview

N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

BUK7675-55A
25 August 2014
D2
PA
K
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2; Fig. 3
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11; Fig. 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 11 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
30.3
mJ
-
64
75
Min
-
-
-
Typ
-
-
-
Max
55
20.3
62
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
150
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