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MD56V62160E-7TA

Description
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
Categorystorage    storage   
File Size529KB,34 Pages
ManufacturerOKI
Websitehttp://www.oki.com
Download Datasheet Parametric Compare View All

MD56V62160E-7TA Overview

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54

MD56V62160E-7TA Parametric

Parameter NameAttribute value
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density67108864 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
OKI Semiconductor
MD56V62160E
4-Bank
×
1,048,576-Word
×
16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160E-01
Issue Date: Feb. 4, 2002
DESCRIPTION
The MD56V62160E is a 4-Bank
×
1,048,576-word
×
16-bit Synchronous dynamic RAM fabricated in
Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL
compatible.
FEATURES
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-Bank
×
1,048,576-word
×
16-bit configuration
Single 3.3 V power supply,
±0.3
V tolerance
Input : LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
- CAS Latency (1, 2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)
CBR auto-refresh, Self-refresh capability
• Packages:
54-pin 400 mil plastic TSOP (TypeII)
(
TSOP(2)54-P-400-0.80-K
)
(Product: MD56V62160E-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
Max.
Frequency
143 MHz
100 MHz
Access Time (Max.)
t
AC2
6 ns
6 ns
t
AC3
6 ns
6 ns
MD56V62160E-7
MD56V62160E-10
1/34

MD56V62160E-7TA Related Products

MD56V62160E-7TA MD56V62160E-10TA
Description Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
Parts packaging code TSOP2 TSOP2
package instruction TSOP2, TSOP2,
Contacts 54 54
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G54 R-PDSO-G54
length 22.22 mm 22.22 mm
memory density 67108864 bi 67108864 bi
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 16
Number of functions 1 1
Number of ports 1 1
Number of terminals 54 54
word count 4194304 words 4194304 words
character code 4000000 4000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 4MX16 4MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm
self refresh YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL
width 10.16 mm 10.16 mm
Base Number Matches 1 1
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