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HUF75831SK8
Data Sheet
December 2001
3A, 150V, 0.095 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.095Ω,
V
GS
=
10V
5
1
2
3
4
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
• UIS Rating Curve
Ordering Information
PART NUMBER
HUF75831SK8
PACKAGE
MS-012AA
BRAND
75831SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75831SK8T.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HUF75831SK8
UNITS
V
V
V
A
A
150
150
±20
3
2
Figure 4
Figures 6, 14, 15
2.5
20
-55 to 150
300
260
W
mW/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
3. 152
o
C/W measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000 seconds
4. 189
o
C/W measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000 seconds
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75831SK8 Rev. B
HUF75831SK8
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 140V, V
GS
= 0V
V
DS
= 135V, V
GS
= 0V, T
A
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θJA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
Pad Area = 0.054 in
2
(34.8 mm
2
) (Note 3)
Pad Area = 0.0115 in
2
(7.42 mm
2
)(Note 4)
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
1175
275
72
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V,
I
D
= 3A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
66
35
2.4
4.3
11
80
42
2.9
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 75V, I
D
= 3A
V
GS
=
10V,
R
GS
= 4.7Ω
(Figures 18, 19)
-
-
-
-
-
-
-
11
6
40
9
-
25
-
-
-
-
75
ns
ns
ns
ns
ns
ns
-
-
-
-
50
152
189
o
C/W
o
C/W
o
C/W
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
150
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 3A, V
GS
= 10V (Figure 9)
2
-
-
0.079
4
0.095
V
Ω
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
I
SD
= 3A
I
SD
= 1.5A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 3A, dI
SD
/dt = 100A/µs
I
SD
= 3A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
132
380
UNITS
V
V
ns
nC
©2001 Fairchild Semiconductor Corporation
HUF75831SK8 Rev. B
HUF75831SK8
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
3
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
4
V
GS
= 10V, R
θJA
= 50
o
C/W
2
1
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
3
1
THERMAL IMPEDANCE
Z
θJA
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
10
-2
10
-1
10
0
10
1
10
2
10
3
R
θJA
= 50
o
C/W
0.1
0.01
SINGLE PULSE
0.001
10
-5
10
-4
10
-3
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
R
θJA
= 50
o
C/W
I
DM
, PEAK CURRENT (A)
100
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
V
GS
= 10V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10
2
10
3
150 - T
A
125
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF75831SK8 Rev. B
HUF75831SK8
Typical Performance Curves
100
R
θJA
= 50
o
C/W
I
D
, DRAIN CURRENT (A)
(Continued)
100
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
100µs
10
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
1
10
100
1ms
10ms
0.1
1
0.01
500
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
15
20
V
GS
= 20V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
15
V
GS
= 7V
V
GS
= 6V
V
GS
=5V
I
D,
DRAIN CURRENT (A)
10
T
J
= 150
o
C
5
10
T
J
= -55
o
C
5
T
J
= 25
o
C
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
1.0
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
1.1
1.0
1.5
0.9
1.0
V
GS
= 10V, I
D
= 3A
0.5
-80
0.8
-40
0
40
80
120
160
0.7
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75831SK8 Rev. B
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