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QSE213C

Description
Photo Transistor
CategoryLED optoelectronic/LED    photoelectric   
File Size1MB,5 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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QSE213C Overview

Photo Transistor

QSE213C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerRochester Electronics
Reach Compliance Codeunknown
Optoelectronic device typesPHOTO TRANSISTOR

QSE213C Preview

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QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
March 2006
QSE213C/QSE214C
Plastic Silicon Infrared Phototransistor
Features
NPN Silicon Phototransistor
Package Type: Sidelooker
Medium Reception Angle, 50°
Daylight Filter
Clean Epoxy Package
Matching Emitter: QEE213
Description
The QSE213C/QSE214C is a silicon phototransistor encapsu-
lated in a medium angle, infrared transparent, clear thin plastic
sidelooker package.
Package Dimensions
0.060 (1.50)
0.174 (4.44)
R 0.030 (0.76)
0.047 (1.20)
0.224 (5.71)
0.177 (4.51)
0.030 (0.76)
0.5 (12.7)
MIN
EMITTER
0.020 (0.51)
SQ. (2X)
0.100 (2.54)
Schematic
Collector
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal
dimensions unless otherwise specified.
Emitter
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
QSE213C/QSE214C Rev. 1.0.0
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
Parameter
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
Electrical/Optical Characteristics
(T
A
=25°C unless otherwise specified)
Symbol Parameter
λ
PS
Q
I
D
BV
CEO
BV
ECO
I
C(ON)
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
V
CE
= 10 V, E
e
= 0
I
C
= 1mA
I
E
= 100µA
E
e
= 0.5 mW/cm
2
,
V
CE
= 5V
(QSE213C)
(QSE214C)
Test Conditions
Min
30
5
0.2
1.00
Typ
880
±25
8
8
Max
100
1.50
0.4
V
µs
Units
nM
°
nA
V
V
mA
V
CE(SAT)
Saturation Voltage
t
r
t
f
Rise Time
Fall Time
V
CE
= 5 V
(5)
, E
e
= 0.5mW/cm
2
,
I
C
= 0.1mA
(5)
V
CC
= 5V, R
L
= 100
, I
C
= 1mA
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
λ
= 950 nm GaAs.
2
QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Fig. 1 Dark Current vs. Collector Emitter Voltage
10
1
Fig. 2 Radiation Diagram
I
D
- DARK CURRENT (mA)
10
0
120°
130°
10
-1
140°
150°
10
-2
160°
170°
10
-3
0
10
20
30
40
50
60
180°
1.0
0.8
0.6
110°
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Light Current vs. Ambient Temperature
I
L
- NORMALIZED LIGHT CURRENT
I
L
- NORMALIZED LIGHT CURRENT
10
Normalized to:
V
CE
= 5 V
I
e
= 0.5 mW/cm
2
T
A
= 25˚C
Fig. 4 Light Current vs. Collector to Emitter Voltage
10
I
e
= 1 mW/cm
2
1
I
e
= 0.5 mW/cm
2
I
e
= 0.2 mW/cm
2
0.1
I
e
= 0.1 mW/cm
2
1
0.01
Normalized to:
V
CE
= 5 V
I
e
= 0.5 mW/cm
2
T
A
= 25˚C
1
10
0.1
-40
-20
0
20
40
60
80
100
0.001
0.1
T
A
- AMBIENT TEMPERATURE (˚C)
V
CE
- COLLECTOR - EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
I
D
- NORMALIZED DARK CURRENT
10
3
Normalized to:
V
CE
= 25 V
T
A
= 25˚C
10
2
V
CE
= 25 V
10
1
V
CE
= 10 V
10
0
10
-1
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
3
QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
®
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™
GTO™
DOME™
HiSeC™
EcoSPARK™
I
2
C™
2
E CMOS™
i-Lo™
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
DISCLAIMER
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
4
QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
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