SIHFB18N50K-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFB18N50K-E3: Description17 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size3MB，7 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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SIHFB18N50K-E3 Overview

17 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHFB18N50K-E3 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	500 V
Processing package description	ROHS COMPLIANT, TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	NOT SPECIFIED
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	17 A
Rated avalanche energy	370 mJ
Maximum drain on-resistance	0.2900 ohm
Maximum leakage current pulse	68 A

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IRFB18N50K, SiHFB18N50K

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 10 V

120

Single

FEATURES

500

0.26

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Available

RoHS*

COMPLIANT

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Low R

DS(on)

• Lead (Pb)-free Available

TO-220

APPLICATIONS

N-Channel

MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220

IRFB18N50KPbF

SiHFB18N50K-E3

IRFB18N50K

SiHFB18N50K

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

for 10 s

6-32 or M3 screw

= 25 °C

dV/dt

, T

stg

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

500

± 30

1.8

370

220

7.8

- 55 to + 150

300

W/°C

V/ns

°C

UNIT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. Starting T

= 25 °C, L = 2.5 mH, R

= 25

Ω,

= 17 A.

c. I

≤

17 A, dI/dt

≤

376 A/µs, V

≤

, T

≤

150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.kersemi.com

SIHFB18N50K-E3 Related Products

	SIHFB18N50K-E3	IRFB18N50KPBF	SIHFB18N50K
Description	17 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	17 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	17 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3
Minimum breakdown voltage	500 V	500 V	500 V
Processing package description	ROHS COMPLIANT, TO-220, 3 PIN	ROHS COMPLIANT, TO-220, 3 PIN	ROHS COMPLIANT, TO-220, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	TRANSFERRED	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Number of components	1	1	1
transistor applications	switch	switch	switch
Transistor component materials	silicon	silicon	silicon
Channel type	N channel	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply
Maximum leakage current	17 A	17 A	17 A
Rated avalanche energy	370 mJ	370 mJ	370 mJ
Maximum drain on-resistance	0.2900 ohm	0.2900 ohm	0.2900 ohm
Maximum leakage current pulse	68 A	68 A	68 A

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