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BUL56BSMD-JQR-A

Description
Power Bipolar Transistor, 14A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, SMD1-3
CategoryDiscrete semiconductor    The transistor   
File Size20KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BUL56BSMD-JQR-A Overview

Power Bipolar Transistor, 14A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, SMD1-3

BUL56BSMD-JQR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionCHIP CARRIER, R-CBCC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)14 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUL56BSMD
MECHANICAL DATA
Dimensions in mm
NPN
FAST SWITCHING
TRANSISTOR
3 .6 0 (0 .1 4 2 )
M a x .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
FEATURES
• LOW SATURATION VOLTAGE
• ULTRA FAST TURN–ON AND TURN–OFF
SWITCHING (t
r
/ t
f
= 40ns)
1
3
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• High speed TO220 transistor suited for low
voltage applications.
• High frequency and high efficiency
converters, switching regulators and motor
controls.
SMD1
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
• Ideally suited for 12V and 24V inverters.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
R
th
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
Storage Temperature Range
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
200V
100V
7V
14A
4A
85W
4.8W/°C
–65 to 200°C
175°C / W
Prelim. 7/00

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