BYD63 datasheet, PDF - EEWORLD Datasheet

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BYD63: DescriptionDIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size66KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD63 Overview

DIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD63 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum output current	0.45 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	300 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

BYD63 Preview

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D119

BYD63

Ripple blocking diode

Product speciﬁcation

Supersedes data of 1996 June 10

2003 Mar 06

Philips Semiconductors

Product speciﬁcation

Ripple blocking diode

FEATURES

•

Glass passivated

•

High maximum operating

temperature

•

Low leakage current

•

Excellent stability

•

Guaranteed minimum turn-on time

for absorbing forward current

transients and oscillations

•

Specially designed as rectifier in

the auxiliary power supply in e.g.

switched mode power supplies

•

Available in ammo-pack.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

RRM

F(AV)

PARAMETER

repetitive peak reverse voltage

continuous reverse voltage

average forward current

averaged over any 20 ms period;

= 55

°C;

lead length = 10 mm;

see Fig.2; see also Fig.4

averaged over any 20 ms period;

amb

= 65

°C;

PCB mounting (Fig.8);

see Fig.3; see also Fig.4

FRM

FSM

stg

repetitive peak forward current

non-repetitive peak forward current

storage temperature

junction temperature

= 55

°C

amb

= 65

°C

t = 10 ms half sine wave; T

= T

j max

prior to surge; V

= V

RRMmax

CONDITIONS

−

MIN.

MAM123

BYD63

DESCRIPTION

Cavity free cylindrical glass package

through Implotec™

(1)

technology.

(1) Implotec is a trademark of Philips.

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

handbook, 4 columns

Fig.1 Simplified outline (SOD81) and symbol.

MAX.

300

0.85

UNIT

−

0.45

−

−65

8.25

4.45

+175

°C

2003 Mar 06

Philips Semiconductors

Product speciﬁcation

Ripple blocking diode

ELECTRICAL CHARACTERISTICS

= 25

°C

unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

reverse current

CONDITIONS

= 1 A; T

= T

j max

; see Fig.5

= 1 A; see Fig.5

= V

RRMmax

;

see Fig.6

= V

RRMmax

; T

= 165

°C;

see Fig.6

forward recovery time

turn-on time

when switched to I

= 1 A

in 50 ns; see Fig.9

when switched from V

= 0 V to

= 3 V; measured between

10% and 90% of I

F max

;

see Fig.11

−

500

MIN.

−

TYP.

MAX.

1.7

2.3

100

350

−

BYD63

UNIT

µA

reverse recovery time

when switched from I

= 0.5 A to

−

= 1 A; measured at

= 0.25 A; see Fig.11

f = 1 MHz; V

= 0 V; see Fig.7

−

150

diode capacitance

−

THERMAL CHARACTERISTICS

SYMBOL

th j-tp

th j-a

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm,

see Fig.8.

For more information please refer to the

“General Part of associated Handbook”.

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

CONDITIONS

lead length = 10 mm

note 1

VALUE

120

UNIT

K/W

2003 Mar 06

Philips Semiconductors

Product speciﬁcation

Ripple blocking diode

GRAPHICAL DATA

1.6

MLC303

BYD63

handbook, halfpage

0.8

MLC304

I F(AV)

(A)

1.2

I F(AV)

(A)

0.6

lead length 10 mm

0.8

0.4

0.2

a = 1.42; V

= V

RRMmax

;

= 0.5.

Switched mode application.

100

T tp (

200

100

a = 1.42; V

= V

RRMmax

;

= 0.5.

Device mounted as shown in Fig.8.

Switched mode application.

Tamb (

200

Fig.2

Maximum permissible average forward

current as a function of tie-point

temperature (including losses due to

reverse leakage).

Fig.3

Maximum permissible average forward

current as a function of ambient

temperature (including losses due to

reverse leakage).

handbook, halfpage

MLC302

handbook, halfpage

MLC301

(W)

a = 3 2.5 2

1.57

1.42

(A)

0.5

I F(AV) (A)

1.0

V F (V)

a = I

F(RMS)

F(AV)

; V

= V

RRMmax

;

= 0.5.

Fig.4

Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function of

average forward current.

Dotted line: T

= 175

°C.

Solid line: T

= 25

°C.

Fig.5

Forward current as a function of forward

voltage; maximum values.

2003 Mar 06

Philips Semiconductors

Product speciﬁcation

Ripple blocking diode

BYD63

handbook, halfpage

(

MGA853

handbook, halfpage

MLC305

(pF)

100

T j ( o C)

200

V R (V)

= V

RRMmax

f = 1 MHz; T

= 25

°C.

Fig.6

Reverse current as a function of junction

temperature; maximum values.

Fig.7

Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

MGD600

90%

100%

t fr

10%

MGA200

Dimensions in mm.

Fig.8 Device mounted on a printed-circuit board.

Fig.9 Forward recovery time definition.

2003 Mar 06

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