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BYD63143

Description
DIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size131KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYD63143 Overview

DIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode

BYD63143 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.45 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BYD63143 Related Products

BYD63143 BYD63133
Description DIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.45 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode
Maker NXP NXP
package instruction O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-LALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum output current 0.45 A 0.45 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 300 V 300 V
Maximum reverse recovery time 0.15 µs 0.15 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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