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BYG60JT/R

Description
Rectifier Diode, 1 Element, 1.9A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size311KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYG60JT/R Overview

Rectifier Diode, 1 Element, 1.9A, 600V V(RRM),

BYG60JT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-609 codee0
Maximum non-repetitive peak forward current25 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1.9 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.25 µs
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)

BYG60JT/R Related Products

BYG60JT/R BYG60KT/R BYG60DT/R
Description Rectifier Diode, 1 Element, 1.9A, 600V V(RRM), Diode, Rectifier Diode, 1 Element, 1.9A, 200V V(RRM),
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
JESD-609 code e0 e0 e0
Terminal surface Tin/Lead (Sn80Pb20) Tin/Lead (Sn80Pb20) Tin/Lead (Sn80Pb20)
Configuration SINGLE - SINGLE
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V - 1.2 V
Maximum non-repetitive peak forward current 25 A - 25 A
Number of components 1 - 1
Maximum operating temperature 175 °C - 175 °C
Maximum output current 1.9 A - 1.9 A
Maximum repetitive peak reverse voltage 600 V - 200 V
Maximum reverse recovery time 0.25 µs - 0.25 µs
surface mount YES - YES
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