BLV859 datasheet, PDF - EEWORLD Datasheet

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BLV859: DescriptionRF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4; CategoryDiscrete semiconductor The transistor; File Size14KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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BLV859 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4

BLV859 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, R-CDFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	28 V
Configuration	Single
Minimum DC current gain (hFE)	30
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	145 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

BLV859 Preview

BLV859

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI BLV859

is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .400 BAL FLG(C)

.080x45°

A

B

FULL R

(4X).060 R

E

D

C

.1925

F

H

I

N

L

G

M

FEATURES:

•

Common Emitter

•

P

G

= 10 dB at 150 W/860 MHz

•

Omnigold™

Metalization System

MAXIMUM RATINGS

I

C

V

CEO

V

CBO

V

EBO

P

DISS

T

J

T

STG

θ

JC

15 A

28 V

60 V

2.5 V

145 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.20 °C/W

DIM

A

B

C

D

E

F

G

H

I

J

K

L

M

N

.395 / 10.03

.850 / 21.59

1.335 / 33.91

.003 / 0.08

.060 / 1.52

.082 / 2.08

.120 / 3.05

.380 / 9.65

.780 / 19.81

.435 / 11.05

1.090 / 27.69

MIN IMUM

inches / m m

J

K

MAXIMUM

inches / m m

.220 / 5.59

.210 / 5.33

.230 / 5.84

.130 / 3.30

.390 / 9.91

.820 / 20.83

1.345 / 34.16

.007 / 0.18

.070 / 1.78

.100 / 2.54

.205 / 5.21

.407 / 10.34

.870 / 22.10

CHARACTERISTICS

SYMBOL

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CEO

h

FE

C

OB

P

G

IMD

1

VSRW

I

C

= 30 mA

I

C

= 60 mA

I

E

= 1.2 mA

V

CB

= 27 V

V

CE

= 20 V

V

CE

= 25 V

V

CB

= 26 V

T

C

= 25 °C

NONETEST

CONDITIONS

MINIMUM TYPICAL MAXIMUM

60

28

2.5

3.0

6.0

UNITS

V

mA

---

pF

dB

dBc

I

C

= 2.25 A

f = 1.0 MHz

I

CQ

= 2 X 2.25 A

f = 860 MHz

P

OUT

= 20 W

PEP

30

75

10

140

V

CC

= 25 V

P

OUT

= 20 W

-54

No Degradation in Output

Power

V

CC

= 25 V

I

CQ

= 2 X 2.25 A

VSWR = 50:1 @ all phase angles

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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