BUZ902DP datasheet, PDF - EEWORLD Datasheet

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BUZ902DP: Description16A, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PBL, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size24KB，2 Pages; ManufacturerSEMELAB

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BUZ902DP Overview

16A, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PBL, 3 PIN

BUZ902DP Parametric

Parameter Name	Attribute value
Maker	SEMELAB
Parts packaging code	TO-3PBL
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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MAGNA

TEC

20.0

5.0

BUZ902DP

BUZ903DP

MECHANICAL DATA

Dimensions in mm

3.3 Dia.

N–CHANNEL

POWER MOSFET

POWER MOSFETS FOR

AUDIO APPLICATIONS

1

2.0

2

3

2.0

1.0

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

1.2

0.6

2.8

3.4

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY P–CHANNEL

BUZ907DP & BUZ908DP

5.45 5.45

TO-3PBL

Pin 1 – Gate

Pin 2 – Source

Case – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

DSX

Drain – Source Voltage

V

GSS

I

D

I

D(PK)

P

D

T

stg

T

j

R

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

BUZ902DP

220V

16A

250W

–55 to 150°C

150°C

0.5°C/W

BUZ903DP

250V

±14V

Magnatec.

Telephone (01455) 554711. Fax (01455) 558843

Prelim. 01/97

BUZ902DP Related Products

	BUZ902DP	BUZ903DP
Description	16A, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PBL, 3 PIN	16A, 250V, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-3PBL, 3 PIN
Parts packaging code	TO-3PBL	TO-247
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	2
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE
Maximum drain current (ID)	16 A	16 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A	16 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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