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Datasheet> All Categories > Discrete semiconductor> The transistor> BLV920
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BLV920

Description
TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-171A, 6 PIN, BIP RF Power
CategoryDiscrete semiconductor    The transistor   
File Size89KB，12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLV920 Overview

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-171A, 6 PIN, BIP RF Power

BLV920 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionFLANGE MOUNT, R-CDFM-F6
Contacts6
Manufacturer packaging codeSOT171A
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

BLV920 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLV920
UHF power transistor
Product specification
Supersedes data of 1995 Apr 10
1997 Nov 17
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
•
Internal input matching to achieve high power gain and
easy design of wideband circuits
•
Emitter ballasting resistors for an optimum temperature
profile
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage
BLV920
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171A flange envelope with a
ceramic cap. All leads are isolated from the flange.
2
4
6
c
b
PINNING - SOT171A
PIN
1
2
3
4
5
6
SYMBOL
e
e
b
c
e
e
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
Top view
DESCRIPTION
1
3
5
MAM141
e
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF OPERATION
CW, class-AB
f
(MHz)
960
V
CE
(V)
26
P
L
(W)
20
G
p
(dB)
≥10
η
C
(%)
≥
55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 17
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
up to T
mb
= 25
°C
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
BLV920
MAX.
70
30
3
3
3
50
+150
200
UNIT
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
CONDITIONS
P
tot
= 49 W; T
mb
= 25
°C
VALUE
3.5
0.4
UNIT
K/W
K/W
handbook, halfpage
10
MLC669
handbook, halfpage
80
MLC670
IC
(A)
(2)
1
(1)
P
tot
(W)
60
(2)
40
(1)
20
10
1
1
10
V
CE (V)
10
2
0
0
20
40
60
80
100
120
o
140
Th ( C)
(1) T
mb
= 25
°C.
(2) T
h
= 70
°C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1997 Nov 17
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Measured under pulsed conditions: t
p
≤
500
µs; δ ≤
0.01.
PARAMETER
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 15 mA
open base; I
C
= 30 mA
open collector; I
E
= 0.6 mA
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 1 A; note 1
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 26 V; I
C
= 0; f = 1 MHz
MIN.
70
30
3
−
30
−
−
−
−
−
−
−
17
11
TYP.
BLV920
MAX.
−
−
−
1.5
120
−
−
UNIT
V
V
V
mA
pF
pF
MLC671
100
handbook, halfpage
h FE
80
(1)
handbook, halfpage
60
MLC672
Cc
(pF)
40
60
(2)
40
20
20
0
0
1
2
3
4
5
I C (A)
6
0
0
10
20
30
40
50
VCB (V)
Measured under pulsed conditions; t
p
≤
500
µs; δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
I
E
= i
e
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
1997 Nov 17
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter, class-AB test circuit; R
th mb-h
= 0.4 K/W.
MODE OF OPERATION
CW, class-AB
Ruggedness in class-AB operation
f
(MHz)
960
V
CE
(V)
26
I
CQ
(mA)
50
P
L
(W)
20
G
p
(dB)
≥10
BLV920
η
C
(%)
≥55
The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 50 mA; T
h
= 25
°C;
R
th mb-h
= 0.4 K/W.
handbook, halfpage
16
MLC673
MLC674
80
η
(%)
Gp
60
handbook, halfpage
30
Gp
(dB)
12
PL
(W)
20
η
8
40
10
4
20
0
0
10
20
P L (W)
30
0
0
0
1
2
3
P i (W)
4
V
CE
= 26 V.
I
CQ
= 50 mA.
f = 960 MHz.
V
CE
= 26 V.
I
CQ
= 50 mA.
f = 960 MHz.
Fig.6
Power gain and efficiency as functions of
load power; typical values.
Fig.7
Load power as a function of input power;
typical values.
1997 Nov 17
5
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