BDS19SMDR4 datasheet, PDF - EEWORLD Datasheet

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BDS19SMDR4: DescriptionPower Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size456KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BDS19SMDR4 Overview

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

BDS19SMDR4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-276AB
JESD-30 code	R-CBCC-N3
JESD-609 code	e4
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz

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SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS19SMD

•

High Voltage

Hermetic Ceramic Surface Mount Package

Ideally suited for Power Linear, Switching

and general Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

≤

75°C

Total Power Dissipation at

Derate Above 75°C

Junction Temperature Range

Storage Temperature Range

-150V

-5V

-8A

-2A

80W

0.64W/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.56

Units

°C/W

** This datasheet supersedes document 3346

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8670

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

BDS19SMDR4 Related Products

	BDS19SMDR4	BDS19SMD	BDS19SMD-JQR-B	BDS19SMD-JQR-A	BDS19SMD-JQR
Description	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	150 V	150 V	150 V	150 V	150 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15	15
JEDEC-95 code	TO-276AB	TO-276AB	TO-276AB	TO-276AB	TO-276AB
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz
Base Number Matches	-	1	1	1	1

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