EEWORLDEEWORLDEEWORLD

Part Number

Search

BLV58

Description
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-289A, 5 PIN, BIP RF Power
CategoryDiscrete semiconductor    The transistor   
File Size85KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLV58 Overview

TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-289A, 5 PIN, BIP RF Power

BLV58 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionFLANGE MOUNT, R-CDFM-F4
Contacts5
Manufacturer packaging codeSOT289A
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
Shell connectionEMITTER
Maximum collector current (IC)4 A
Collector-based maximum capacity45 pF
Collector-emitter maximum voltage27 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)30
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment87 W
Maximum power dissipation(Abs)87 W
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

BLV58 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV58
UHF linear push-pull power
transistor
Product specification
September 1991
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES
High power gain
Double stage internal input
matching for high input impedance
Diffused emitter-ballasting resistors
enhances ruggedness
Gold metallization for high
reliability.
DESCRIPTION
The BLV58 is a common emitter
epitaxial npn silicon planar transistor
designed for high linearity class-A
operation in UHF (bands 4 and 5) TV
transmitters and transposers.
The device is incorporated in a
push-pull SOT289 flange envelope
with a ceramic cap, which is utilized
with the emitters connected to the
flange.
PINNING - SOT289
PIN
1
2
3
4
5
DESCRIPTION
collector 1
collector 2
base 1
base 2
emitter
WARNING
Product and environmental safety - toxic materials
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
c.w. class-A
Note
f
vision
(MHz)
860
V
CE
(V)
25
I
CQ
(A)
2
×
1.6
P
o sync
(W)
25
G
p
(dB)
>10
BLV58
d
im
(dB)
(note
1)
< −45
1. Three-tone test method (vision carrier
−8
dB, sound carrier
−7
dB,
sideband signal
−16
dB); zero dB corresponds to peak sync level.
PIN CONFIGURATION
c1
k, halfpage
1
2
handbook, halfpage
b1
5
3
Top view
4
MBC043
MBA970
e
b2
c2
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
September 1991
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES (per transistor section unless otherwise specified)
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
total power dissipation
CONDITIONS
open emitter
open base
open collector
DC or average value
peak value;
f
>
1 MHz
DC operation;
T
mb
= 70
°C
(note 1)
MIN.
BLV58
MAX.
50
27
3.5
4
8
87
UNIT
V
V
V
A
A
W
T
stg
T
j
Note
storage temperature range
junction operating temperature
−65
150
200
°C
°C
1. Total device, both sections equally loaded.
MRA354
MRA355
handbook,
10
halfpage
200
handbook, halfpage
Th = 25
o
C
Tmb = 70 C
120
I
80
II
o
IC
(A)
P
tot
(W)
160
40
1
1
10
VCE (V)
50
0
0
20
40
60
80
100
120
Th (
o
C)
Total device, both sections equally loaded.
(I) Continuous DC operation.
(II) Short time operation during mismatch.
Total device, both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
September 1991
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
THERMAL RESISTANCE
SYMBOL
R
th j-mb(DC)
PARAMETER
from junction to mounting base
CONDITIONS
P
dis
= 87 W;
T
mb
= 70
°C
(note 1)
note 1
MAX.
1.5
BLV58
UNIT
K/W
R
th mb-h
Note
from mounting base to heatsink
0.2
K/W
1. Total device, both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°C.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
collector capacitance
CONDITIONS
open emitter;
I
C
= 20 mA
open base;
I
C
= 50 mA
open collector;
I
E
= 10 mA
V
BE
= 0;
V
CE
= 27 V
V
CE
= 25 V;
I
C
= 1.6 A
V
CB
= 25 V;
I
E
= I
e
= 0;
f = 1 MHz
MIN.
50
27
3.5
30
TYP.
36
MAX. UNIT
10
45
pF
V
V
V
mA
September 1991
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA350
MRA346
120
handbook, halfpage
h FE
handbook, halfpage
Cc
(pF)
120
80
80
40
40
0
0
0
1
2
3
IC (A)
0
10
20
30
VCB (V)
40
V
CE
= 25 V.
I
E
= i
e
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector
current, typical values.
Fig.5
Collector capacitance as a function of
collector-base voltage, typical values.
September 1991
5
Strange! Please help the moderator with the I2C clock problem
I encountered a problem when using I2C. I used an 8M crystal, SYSTEM CLOCK=72M, PCLK1=36M.When I2C was used at 400K, it did not work properly. The communication read and write died after a few times. ...
hjklhu stm32/stm8
Looking for a second-hand 1150-pin CPU, price negotiable
[i=s]This post was last edited by DIAG on 2017-12-4 22:17[/i] As the title says, I am looking for a second-hand 1150-pin CPU. The price is negotiable. I have an ASUS B85M-E motherboard. I have changed...
DIAG Buy&Sell
Signal Attenuator Principle and Design
An attenuator is a circuit used to introduce a predetermined attenuation within a specified frequency range. It is generally indicated by the decibel number of the introduced attenuation and the numbe...
bqgup Creative Market
Audio acquisition system based on FPGA_attached physical picture
Audio acquisition system based on FPGA_attached with actual pictures I am now busy making some audio acquisition stuff, hope you can give me some advice and learn from each other. The platform I made ...
nddz Embedded System
Baud rate problem
After the baud rate is set, why can the signal be received at other baud rates? Of course, the signal received in this way may not be correct....
g200407331 Analog electronics
Luminary products and applications
This article mainly introduces some development tools of Zhiyuan Electronics for reference....
chenzhufly Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1094  2395  825  1658  2775  23  49  17  34  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号