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DISCRETE SEMICONDUCTORS
DATA SHEET
BSR19; BSR19A
NPN high voltage transistors
Product data sheet
Supersedes data of 2004 Jan 13
2004 Mar 15
NXP Semiconductors
Product data sheet
NPN high voltage transistors
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 160 V).
APPLICATIONS
•
General purpose switching and amplification
•
Especially used for telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
MARKING
TYPE NUMBER
BSR19
BSR19A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BSR19
BSR19A
PACKAGE
NAME
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
56* or U35
57* or U36
Top view
handbook, halfpage
BSR19; BSR19A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
2004 Mar 15
2
NXP Semiconductors
Product data sheet
NPN high voltage transistors
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BSR19
BSR19A
V
CEO
collector-emitter voltage
BSR19
BSR19A
I
CM
P
tot
h
FE
peak collector current
total power dissipation
DC current gain
BSR19
BSR19A
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
T
amb
≤
25
°C
I
C
= 10 mA; V
CE
= 5 V
60
80
100
open base
−
−
−
−
open emitter
−
−
CONDITIONS
BSR19; BSR19A
MIN.
MAX.
160
180
140
160
600
250
−
−
300
V
V
V
V
UNIT
mA
mW
MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BSR19
BSR19A
V
CEO
collector-emitter voltage
BSR19
BSR19A
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
140
160
6
300
600
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
160
180
V
V
MIN.
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
CONDITIONS
VALUE
500
UNIT
K/W
thermal resistance from junction to ambient note 1
2004 Mar 15
3
NXP Semiconductors
Product data sheet
NPN high voltage transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BSR19
I
CBO
collector cut-off current
BSR19A
I
EBO
h
FE
emitter cut-off current
DC current gain
BSR19
BSR19A
DC current gain
BSR19
BSR19A
DC current gain
BSR19
BSR19A
V
CEsat
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 5 mA
BSR19
BSR19A
C
c
f
T
collector capacitance
transition frequency
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 50 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= 0 A; V
CB
= 120 V
I
E
= 0 A; V
CB
= 120 V; T
amb
= 100
°C
I
C
= 0 A; V
EB
= 4 V
I
C
= 1 mA; V
CE
= 5 V
PARAMETER
collector cut-off current
I
E
= 0 A; V
CB
= 100 V
I
E
= 0 A; V
CB
= 100 V; T
amb
= 100
°C
CONDITIONS
BSR19; BSR19A
MIN.
−
−
−
−
−
60
80
60
80
20
30
−
−
−
−
100
MAX.
100
100
50
50
50
−
−
250
250
−
−
150
250
200
6
300
UNIT
nA
µA
nA
µA
nA
mV
mV
mV
pF
MHz
2004 Mar 15
4