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AOT2916L

Description
100V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size346KB,7 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet Parametric Compare View All

AOT2916L Overview

100V N-Channel MOSFET

AOT2916L Parametric

Parameter NameAttribute value
MakerAlpha & Omega Semiconductor
package instruction,
Reach Compliance Codecompli
AOT2916L/AOTF2916L
100V N-Channel MOSFET
General Description
The AOT2916L & AOTF2916L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of R
DS(ON)
, Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
100V
23A / 17A
< 34mΩ
< 43.5mΩ
100% UIS Tested
100% R
g
Tested
Top View
TO-220
TO-220F
D
G
D
S
AOTF2916L
G
D
S
S
AOT2916L
G
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
AOT2916L
100
±20
23
16
50
5
4
8
3
41.5
20.5
2.1
1.3
-55 to 175
AOTF2916L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
17
12
A
A
A
mJ
23.5
11.5
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
AOT2916L
15
60
3.6
AOTF2916L
15
60
6.4
Units
°
C/W
°
C/W
°
C/W
Rev 0 : Oct. 2012
www.aosmd.com
Page 1 of 7

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