AOT296L/AOB296L
100V N-Channel MOSFET
General Description
The AOT296L/AOB296L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of R
DS(ON)
, Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
100V
70A
< 10mΩ
(< 9.7mΩ
∗
)
< 12.5mΩ (< 12.2mΩ
∗
)
100% UIS Tested
100% R
g
Tested
TO220
Top View
Bottom View
D
D
D
Top View
TO-263
D
2
PAK
Bottom View
D
D
G
G
D
S
S
D
G
G
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±20
70
50
180
9.5
7.5
40
80
107
54
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
48
1.1
Max
15
60
1.4
Units
°
C/W
°
C/W
°
C/W
Prelim: Sep. 2012
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Page 1 of 6
AOT296L/AOB296L
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS，
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO220
V
GS
=6V, I
D
=20A
TO220
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
TO263
V
GS
=6V, I
D
=20A
TO263
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
G
Min
100
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
±100
2.3
180
8.2
T
J
=125°
C
14.2
9.7
7.9
9.4
62
0.7
1
70
2785
10
17.2
12.5
9.7
12.2
2.9
3.4
µA
nA
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.25
V
GS
=0V, V
DS
=50V, f=1MHz
238
12
0.55
37
0.85
52
24
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g(10V)
Total Gate Charge
Q
g(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
1in
2
V
GS
=10V, V
DS
=50V, I
D
=20A
16.5
11.5
5
13
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
8.5
29
4
35
210
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Prelim: Sep. 2012
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Page 2 of 6
AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
5V
I
D
(A)
60
40
20
V
GS
=4.0V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
14
12
R
DS(ON)
(mΩ)
Ω
V
GS
=6V
Normalized On-Resistance
0
2
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
3
6
I
D
(A)
60
6V
80
100
V
DS
=5V
40
4.5V
20
125°C
25°C
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
V
GS
=10V
I
D
=20A
10
8
V
GS
=10V
6
V
GS
=6V
I
D
=20A
17
5
2
10
4
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
22
I
D
=20A
1.0E+02
1.0E+01
18
125°C
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
125°C
40
R
DS(ON)
(mΩ)
Ω
14
10
25°C
6
25°C
1.0E-04
1.0E-05
2
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
Rev 1 : Mar. 2012
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AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
8
Capacitance (pF)
2500
2000
1500
1000
500
0
0
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
40
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
C
rss
C
oss
3500
3000
C
iss
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
500
10µs
10µs
Power (W)
400
300
200
100
0
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100µs
1ms
10ms
T
J(Max)
=175°C
T
C
=25°C
DC
17
5
2
10
100
1000
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.4°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
P
D
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Mar. 2012
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Page 4 of 6
AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
I
AR
(A) Peak Avalanche Current
120
100
80
60
40
20
0
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0
75
100
125
150
T
CASE
(°
C)
Figure 13: Power De-rating (Note F)
25
50
175
100
T
A
=25°C
T
A
=100°C
T
A
=150°C
T
A
=125°C
10
Power Dissipation (W)
80
70
Current rating I
D
(A)
60
Power (W)
50
40
30
20
10
0
0
100
125
150
T
CASE
(°
C)
Figure 14: Current De-rating (Note F)
25
50
75
175
1000
T
A
=25°C
100
10
17
5
2
10
1
0.001
0
0.1
1
10
100
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=60°C/W
40
0.1
P
D
0.01
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
T
on
T
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