BFR280W
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
f
T
= 7.5 GHz
F
= 1.5 dB at 900 MHz
3
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
2
1
VSO05561
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFR280W
Maximum Ratings
Parameter
Marking
REs
1=B
Pin Configuration
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Package
SOT323
Value
Unit
3=C
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
= 115 °C
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
8
10
10
2
10
1.2
80
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Junction - soldering point
2)
R
thJS
435
K/W
Jun-27-2001
BFR280W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 3 mA,
V
CE
= 5 V
h
FE
30
100
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
8
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Jun-27-2001
BFR280W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 6 mA,
V
CE
= 5 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 1.5 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
-
-
14
9
-
-
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
f
= 900 MHz
I
C
= 3 mA,
V
CE
= 5 V
1
G
ms
Symbol
min.
f
T
C
cb
C
ce
C
eb
F
-
-
G
ms
Values
typ.
7.5
0.27
0.18
0.22
max.
-
0.45
-
-
Unit
5
-
-
-
GHz
pF
dB
1.5
2
-
-
-
-
17.5
13.5
-
-
= |
S
21
/
S
12
|
3
Jun-27-2001
BFR280W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
6.472
25.609
1.6163
5.6909
1.0651
14.999
36.218
11.744
6.2179
1.1943
2.3693
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
89.888
0.073457
20.238
0.012696
15
2.4518
0.70035
0.21585
0
0.30017
0
0
0.96275
-
A
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0801
15.596
0.83403
1.409
0.031958
6.989
0.69773
0.2035
252.99
0.19188
0.75
1.11
300
-
fA
-
fA
mA
-
V
-
V
fF
-
V
eV
K
deg
-
fF
-
-
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.57
0.4
0.43
0.5
0
0.41
61
101
175
fF
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-27-2001
nH
nH
nH
nH
nH
nH
fF
BFR280W
Total power dissipation
P
tot
=
f
(T
S
)
100
mW
80
70
60
50
40
30
20
10
0
0
120
°C
P
tot
20
40
60
80
100
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
1
K/W
P
totmax
/ P
totDC
10
2
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Jun-27-2001
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