BSP317PL6327 datasheet, PDF - EEWORLD Datasheet

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BSP317PL6327: DescriptionPower Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size526KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP317PL6327 Overview

Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP317PL6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	0.43 A
Maximum drain current (ID)	0.43 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	1.72 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

BSP317PL6327 Preview

BSP317P

SIPMOS



Small-Signal-Transistor

Feature

•

P-Channel

•

Enhancement mode

•

Logic Level

•

dv/dt rated

Drain

pin 2/4

Product Summary

DS(on)

-250

-0.43

PG-SOT223

Ω

Qualified according to AEC Q101

•

Halogenfree according to IEC61249221

Gate

pin1

Source

pin 3

VPS05163

Type

BSP317P

Package

PG-SOT223

Tape and Reel Information

L6327: 1000 pcs/reel

Marking

Packaging

BSP317P

Non dry

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

=25°C

=70°C

-0.43

-0.34

Pulsed drain current

=25°C

D puls

-1.72

Reverse diode dv/dt

=-0.43A,

=-200V, di/dt=-200A/µs,

jmax

=150°C

dv/dt

kV/µs

Gate source voltage

±20

Power dissipation

=25°C

tot

1.8

Operating and storage temperature

j ,

stg

IEC climatic category; DIN IEC 68-1

ESD Class

-55... +150

55/150/56

°C

JESD22-A114-HBM

Class 1b

2.3

Rev.1.6

Page 1

20121126

BSP317P

Thermal Characteristics

Parameter

Characteristics

Symbol

min.

Values

typ.

max.

Unit

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm

cooling area

thJS

thJA

K/W

115

Electrical Characteristics,

= 25 °C, unless otherwise specified

Parameter

Static Characteristics

Drain-source breakdown voltage

=0,

=-250µA

Symbol

min.

(BR)DSS

GS(th)

DSS

GSS

DS(on)

-250

-1

Values

typ.

-1.5

max.

-2

Unit

Gate threshold voltage,

=-370µA

Zero gate voltage drain current

=-250V,

=0,

=25°C

=-250V,

=0,

=150°C

µA

-0.1

-10

3.3

-0.2

-100

Ω

Gate-source leakage current

=-20V,

Drain-source on-state resistance

=-4.5V,

=-0.39A

Drain-source on-state resistance

=-10V,

=-0.43A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev.2.3

Page 2

20121126

BSP317P

Electrical Characteristics,

= 25 °C, unless otherwise specified

Parameter

Dynamic Characteristics

Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

=-200V,

=-0.43A,

=0 to -10V

=-200V,

=-0.43A

Symbol

Conditions

min.

Values

typ.

0.76

210

13.4

5.7

11.1

254

max.

262

16.7

8.5

16.6

381

100

Unit

iss

oss

rss

d(on)

d(off)

|≥2*|I

|*R

DS(on)max

0.38

=-0.34A

=0,

=-25V,

f=1MHz

=-30V,

=-10V,

=-0.43A,

=6Ω

-0.5

-4

-11.6

-2.8

-0.65 nC

-5.2

-15.1

(plateau)

=-200V,

=-0.43A

Reverse Diode

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

=0,

=-0.43A

=-125V,

F =

/dt=100A/µs

=25°C

-0.84

210

-0.43 A

-1.72

-1.2

138

315

Rev.2.3

Page 3

20121123

BSP317P

1 Power dissipation

tot

(TA )

1.9

BSP 317 P

2 Drain current

(TA )

parameter: |V

≥

10V

-0.5

BSP 317 P

1.6

-0.4

1.4

-0.35

tot

100

120

1.2

0.8

0.6

0.4

0.2

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

°C

160

100

120

°C

160

3 Safe operating area

(

)

parameter :

= 0 ,

A = 25°C

-10

BSP 317 P

4 Transient thermal impedance

thJA

)

parameter :

BSP 317 P

K/W

p = 140.0µs

-10

thJA

)

1 ms

-10

-1

(

10 ms

-1

D = 0.50

0.20

-2

0.10

0.05

-10

-2

-3

0.02

single pulse

0.01

-10

-3 -1

-10

-4 -7

-6

-5

-4

-3

-2

Rev.2.3

Page 4

20121126

BSP317P

5 Typ. output characteristic

)

parameter:

j =25°C, -V

1.6

6 Typ. drain-source on resistance

DS(on)

)

parameter:

;

j =25°C, -V

DS(on)

-I

10V

4.4V

3.6V

3.2V

1.2

2.8V

2.4V

2.2V

Ω

2.2V

2.4V

2.8V

3.2V

3.6V

4.4V

10V

0.8

0.6

0.4

0.2

0.5

1.5

2.5

3.5

0.2

0.4

0.6

0.8

1.2

1.6

-V

-I

7 Typ. transfer characteristics

(

); |V

DS|

≥

2 x |I

| x

DS(on)max

parameter:

= 25 °C

1.6

8 Typ. forward transconductance

= f(I

)

parameter:

j =25°C

1.4

1.2

1.1

1.2

-I

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.4

0.8

1.2

1.6

2.4

2.8

3.6

0.2

0.4

0.6

0.8

1.2

1.6

-V

Rev.2.3

Page 5

-I

20121126

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