< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the nominal output signal (P
out
=30W) attenuates up to 60 dB.
The output power and the drain current increase as the gate
voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that V
GG
is 4V (typical) and 5V (maximum).
At V
GG
=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input power
2
3
1
4
5
1
2
3
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
0
@ V
DD
=12.5V, V
GG
=0V)
4
5
• P
out
>30W,
T
>42% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
PACKAGE CODE: H2M
• Broadband Frequency Range: 450-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current I
GG
=1mA (typ) @ V
GG
=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA30H4552M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H4552M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
f=450-520MHz,
V
GG
<5V
CONDITIONS
V
GG
<5V, P
in
=0W
V
DD
<12.5V, P
in
=50mW
RATING
17
6
100
45
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
SYMBOL PARAMETER
F
P
out
T
2f
o
in
I
GG
I
DD
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
V
DD
=0V, V
GG
=5V, P
in
=0W
V
DD
=17V, V
GG
=0V, P
in
=0W
V
DD
=10.0-15.2V, P
in
=25-70mW,
5<P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=30W (V
GG
control), Load VSWR=20:1
MIN
450
30
42
-
-
-
-
TYP
-
-
-
-
-
1
-
MAX
520
-
-
-40
3:1
-
1
UNIT
MHz
W
%
dBc
—
mA
mA
—
—
Harmonic
Input VSWR
Gate Current
Leakage Current
Stability
Load VSWR Tolerance
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
70
OUTPUT POWER P
out
(W)
TOTAL EFFICIENCY(%)
HARMONICS (dBc)
2 , 3 HARMONICS versus FREQUENCY
-30
nd
rd
60
50
40
30
20
10
P
out
h
T
-40
-50
-60
-70
-80
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
3
rd
430 440 450 460 470 480 490 500 510 520 530
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
FREQUENCY f (MHz)
INPUT VSWR versus FREQUENCY
5
INPUT VSWR
r
in
(-)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
4
3
2
r
in
1
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
Gp
f=470MHz
V
DD
=12.5V
V
GG
=5V
DD
(A)
24
P
out
50
40
30
20
10
0
-10
DRAIN CURRENT I
16
Gp
16
12
8
4
0
12
8
4
0
I
DD
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
60
DRAIN CURRENT I
DD
(A)
24
P
out
50
40
30
20
10
0
-10
P
out
20
16
50
40
30
20
10
0
-10
20
16
Gp
12
8
4
0
Gp
12
8
4
0
I
DD
I
DD
-5
0
5
10
15
20
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
Publication Date : Oct．2011
3
DRAIN CURRENT I
DD
(A)
f=490MHz
V
DD
=12.5V
V
GG
=5V
f=520MHz
V
DD
=12.5V
V
GG
=5V
DRAIN CURRENT
I
f=450MHz
V
DD
=12.5V
V
GG
=5V
P
out
20
20
DD
(A)
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
12
OUTPUT POWER P
out
(W)
60
DRAIN CURRENT I
DD
(A)
12
10
8
I
DD
50
40
30
20
10
0
2
10
8
I
DD
50
40
30
20
10
0
2
6
4
2
0
6
4
2
0
4
6
8
10
12
14
16
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
I
DD
f=520MHz
V
GG
=5V
P
in
=50mW
12
10
P
out
50
40
30
f=490MHz
V
GG
=5V
P
in
=50mW
10
P
out
8
6
I
DD
8
6
4
2
0
20
10
0
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
60
50
40
30
I
DD
f=470MHz
V
DD
=12.5V
P
in
=50mW
P
out
12
10
8
6
4
2
0
2
3
4
5
6
GATE VOLTAGE V
GG
(V)
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2
f=450MHz
V
DD
=12.5V
P
in
=50mW
10
P
out
8
I
DD
6
4
2
0
20
10
0
3
4
5
6
GATE VOLTAGE V
GG
(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
60
DRAIN CURRENT I
DD
(A)
12
f=520MHz
V
DD
=12.5V
P
in
=50mW
50
40
30
f=490MHz
V
DD
=12.5V
P
in
=50mW
10
P
out
50
40
30
20
10
0
2
10
P
out
8
6
I
DD
8
I
DD
6
4
2
0
20
10
0
2
3
4
5
6
GATE VOLTAGE V
GG
(V)
4
2
0
3
4
5
6
GATE VOLTAGE V
GG
(V)
Publication Date : Oct．2011
4
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
f=450MHz
V
GG
=5V
P
in
=50mW
P
out
f=470MHz
V
GG
=5V
P
in
=50mW
P
out
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±1
10.7±1
① ②
③
④
15±1
12.5±1
17±1
44±1
56±1
3.1+0.6/-0.4
0.6±0.2
7.3±0.5
4±0.5
1
2
3
4
5
Publication Date : Oct．2011
5
（2.6）
RF Input (P
in
)
Gate Voltage(V
GG
)
Drain Voltage (V
DD
)
RF Output (P
out
)
RF Ground (Case)
（9.9）
18±1
京公网安备 11010802033920号
EEWORLD
