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SUF4001

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB
CategoryDiscrete semiconductor    High efficiency rectifier diode   
File Size239KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SUF4001 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB

SUF4001 Parametric

Parameter NameAttribute value
Parts packaging codeDO-213AB
Manufacturer packaging codeDO-213AB
SUF4001-SUF4007
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 1.0 A
DO - 213AB
Features
D1
2.6± 0.15
SOLDERABLE ENDS
D2=D1
0
0.20
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
D2
Mechanical Data
Case:JEDEC DO-213AB,molded plastic over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.0046 ounces, 0.116 gram
Mounting position: Any
0.5± 0.1
4.9± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
SUF
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword
rectified current
T
A
=50℃
SUF
100
70
100
SUF
200
140
200
SUF
4004
400
280
400
1.0
SUF
4005
600
420
600
SUF
4006
800
560
800
SUF
4007
1000
700
1000
4001 4002 4003
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
UNITS
V
V
V
A
Peak forward surge current 8.3ms single
half-sine-wave superimposed
on rated load (JEDEC method)
Maximum forward voltage at 1.0A
Maximum DC reverse current
@T
j
=25℃
I
FSM
V
F
I
R
t
rr
50
1.0
30
1.7
10
50
75
10
45
- 55 --- + 175
- 55 --- + 175
A
V
µA
ns
K/W
K/W
at rated DC blockjing voltage @T
j
=100℃
Maximum reverse recovery time (Note1)
Typical thermal resistance
Typical thermal resistance
(NOTE 2)
(NOTE 3)
Operating temperature range
Storage temperature range
R
θJ
T
R
θJ
A
T
j
T
STG
NOTES:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Thermal resistance junction to terminal, 6.0 mm
2
coppeer pads to each terminal.
3. Thermal resistance junction to ambient, 6.0 mm
2
coppeer pads to each terminal.
http://www.luguang.cn
mail:lge@luguang.cn

SUF4001 Related Products

SUF4001 SUF4002 ISO7841_15 2SD1409_15 SUF4007 MSAD100-16 SUF4005
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB ISO7841 ISO7841F High-Performance, 8000 VPK Reinforced Quad-Channel Digital Isolator Silicon NPN Power Transistors 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB Glass Passivated Rectifier Diode Modules 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
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Manufacturer packaging code DO-213AB DO-213AB - - DO-213AB - DO-213AB
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