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UF3M

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size165KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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UF3M Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB

UF3A-UF3M
Surface Mount Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
3.0
A
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO-214AB(SMC)
7.5± 0.25
3.0± 0.15
8.3± 0.2
Mechanical Data
Case:JEDEC DO-214AB,molded plastic
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
2.4± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF3A
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
L
=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
UF3B
UB
100
70
100
UF3D
UD
200
140
200
UF3G
UG
400
280
400
UF3J
UJ
600
420
600
0.203MAX
1.5± 0.25
0.25± 0.06
UF3K
UK
800
560
800
UF3M
UM
1000
700
1000
5.8± 0.3
UNITS
V
V
V
A
UA
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
3
.0
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
50
15
1.0
100
A
V
A
75
12
ns
pF
/W
Maximum instantaneous forw ard voltage at3.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=125
(Note1)
(Note2)
(Note3)
1.4
10
100
1.7
15
- 55 ---- + 150
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
http://www.luguang.cn
mail:lge@luguang.cn

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