B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: B170 B180 B190 B1100
B170B B180B B190B B1100B
Features
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·
·
·
·
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·
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
B
Dim
A
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
SMB
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
A
C
B
C
D
D
J
E
G
H
Mechanical Data
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·
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·
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Case: SMA / SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
H
G
E
J
All Dimensions in mm
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
@ T
A
= 25°C
@ T
A
= 100°C
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJT
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
B170/B
70
49
B180/B
80
56
1.0
30
0.79
0.69
0.5
5.0
80
25
B190/B
90
63
B1100/B
100
70
Unit
V
V
A
A
V
mA
pF
K/W
°C
-65 to +150
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30018 Rev. B-2
1 of 2
B170/B - B1100/B
I
(AV),
AVERAGE FORWARD CURRENT (A)
1.0
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
1.0
0.5
0.1
0
25
50
75
100
125
150
0.01
0
0.2
0.4
0.6
0.8
1.0
T
T
, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
40
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
C
j
, JUNCTION CAPACITANCE (pF)
Single Half Sine-Wave
(JEDEC Method)
1000
T
j
= 25°C
f = 1.0MHz
30
20
100
10
T
j
= 150°C
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
DS30018 Rev. B-2
2 of 2
B170/B - B1100/B
Embedded System
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