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5KP33-G

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,5 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

5KP33-G Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP33-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompli
ECCN codeEAR99
Breakdown voltage nominal value40.8 V
Maximum clamping voltage59 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage33 V
surface mountNO
5000W Transient Voltage Suppressor
5KP-G Series
Stand-off Voltage: 6.8V ~ 220V
Power Dissipation: 5000 Watts
RoHS Device
Features
-Glass passivated chip.
0.052(1.32)
R-6
-Low leakage.
-Uni and Bidirection unit.
-Excellent clamping capability.
-The plastic material has UL recognition 94V-0.
-Fast response time.
0.048(1.22)
1.0(25.4)
MIN.
DIA.
0.360(9.14)
0.340(8.64)
Mechanical Data
-Case: Molded plastic R-6
-Polarity: By cathode band denotes uni-directional
device, none cathode band denotes bi-directional
device
-Weight: 2.1 grams
1.0(25.4)
MIN.
0.360(9.14)
0.340(8.64)
DIA.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derated current by 20%.
Parameter
Peak power dissipation with a 10/1000μs
waveform (Note 1)
Peak pulse current with a 10/1000μs waveform
(Note 1)
Power dissipation on infinite heatsink at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage at
100A for uni-directional devices only (Note 3)
Operating junction and storage temperature
range
NTOES:
Symbol
P
PP
Value
5000
Unit
W
I
PP
See Next Table
8.0
W
P
D
W
I
FSM
500
A
V
F
3.5 / 5.0
V
T
J
, T
STG
-55 to +150
O
C
(1) Non-repetitive current pulse, per fig.5 and derated above T
A
=25 C per fig. 1.
(2) Measured on 8.3 ms single half sine wave of equivalent square wave,duty cycle=4 pulses per minute maximum.
(3) V
F
<3.5V for devices of V
BR
<200V and V
F
<
5.0V for devices of V
BR
>
201V
O
REV:B
QW-BTV08
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