Low VF Low IR SMD Schottky Barrier Rectifiers
CDBB120LR-HF Thru. CDBB1200LR-HF
Reverse Voltage: 20 to 200 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.189 (4.80)
0.157 (4.00)
0.012 (0.31)
MAX.
0.098 (2.50)
0.083 (2.10)
DO-214AA (SMB)
0.087 (2.20)
0.075 (1.90)
0.157 (4.00)
0.130 (3.30)
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AA / SMB
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.091 grams
0.063 (1.60)
0.028 (0.70)
0.008(0.21)
MAX.
0.220 (5.60)
0.197 (5.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Max. Repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Max. Instantaneous forward voltage
@1.0A, T
A
=25°C
Operating Temperature
Symbol
V
RRM
V
DC
V
RMS
V
F
T
J
CDBB
CDBB
CDBB
CDBB
CDBB
CDBB
Units
120LR-HF 140LR-HF 160LR-HF 1100LR-HF 1150LR-HF 1200LR-HF
20
20
14
0.40
40
40
28
0.45
60
60
42
0.55
100
100
70
0.75
150
150
105
0.82
200
200
140
0.85
V
V
V
V
°C
-50 to +150
-50 to +175
Parameter
Forward rectified current
Forward surge current
Reverse Current
see Fig.1
Conditions
Symbol
I
O
I
FSM
I
R
I
R
R
θJA
C
J
T
STG
MIN.
TYP.
MAX.
1.0
50
0.5
20
Units
A
A
mA
mA
°C/W
pF
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
V
R
=V
RRM
T
A
=25°C
V
R
=V
RRM
T
A
=100°C
Thermal Resistance
Diode Junction capacitance
Storage temperature
Junction to ambient
f=1MH
Z
and applied 4V DC reverse Voltage
88
120
-50
+175
°C
REV:A
QW-JL026
Page 1
Comchip Technology CO., LTD.
Low VF Low IR SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBB120LR-HF Thru. CDBB1200LR-HF)
Fig.1 - Typical Forward Current
Derating Curve
Instantaneous Forward Current, (A)
1.2
CD
1
BB1
Fig.2 - Typical Forward Characteristics
100
HF
L R-
Average Forward Current, (A)
1.0
0
B12
CDB
10
3.0
1.0
CD
20
BB1
C
HF~
LR -
0
B14
DB
0L
C
6
B1
DB
HF
R-
F
-H
5 0L
R-H
0.8
0.6
0.4
0.2
0
0
11
BB
CD
0L
D
~C
HF
R-
1
BB
0
20
LR
D
F~C
CDB
HF~
LR-
00
B11
HF
LR-
2 00
BB1
HF
LR -
0.1
T
J
=25°C
Pulse Width 300us
1% Duty Cycle
0
25
50
75
100
125
150
175
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Ambient Temperature, (°C)
Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive
Forward Surge Current
50
Fig.4 - Typical Junction Capacitance
350
300
250
200
150
100
50
Peak Forward Surge Current, (A)
T
J
=25°C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
Junction Capacitance, (pF)
1
10
100
0
0.01
0.1
1
10
100
Number of Cycles at 60Hz
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
100
Reverse Leakage Current, (mA)
10
1.0
T
J
=125 °C
0.1
T
J
=25 °C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
REV:A
QW-JL026
Page 2
Comchip Technology CO., LTD.
Embedded System
京公网安备 11010802033920号
EEWORLD
