TL(RE,RME,SE,OE,YE)17TP(F)
TOSHIBA LED Lamp
TLRE17TP(F),TLRME17TP(F),TLSE17TP(F),
TLOE17TP(F),TLYE17TP(F)
Panel Circuit Indicator
•
•
•
•
•
•
•
5mm package
InGaAℓP technology
All plastic mold type
Transparent lens
High intensity light emission
Excellent low current light output
Applications:
outdoor message signboards, safety equipment, automotive use, etc
Unit: mm
Lineup
Product Name
TLRE17TP(F)
TLRME17TP(F)
TLSE17TP(F)
TLOE17TP(F)
TLYE17TP(F)
Color
Red
Red
Red
Orange
Yellow
InGaAlP
Material
JEDEC
JEITA
TOSHIBA
―
―
4-5AJ2
Absolute Maximum Ratings
(Ta
=
25°C)
Product Name
TLRE17TP(F)
TLRME17TP(F)
TLSE17TP(F)
TLOE17TP(F)
TLYE17TP(F)
Forward Current
I
F
(mA)
50
50
50
50
50
Reverse Voltage
V
R
(V)
4
4
4
4
4
Power Dissipation
P
D
(mW)
120
120
120
120
120
Weight: 0.31 g(Typ.)
Operating
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE)17TP(F)
Electrical and Optical Characteristics
(Ta
=
25°C)
Product Name
Typ. Emission Wavelength
λ
d
TLRE17TP(F)
TLRME17TP(F)
TLSE17TP(F)
TLOE17TP(F)
TLYE17TP(F)
Unit
630
626
613
605
587
λ
P
(644)
(636)
(623)
(612)
(590)
nm
Δλ
20
23
20
20
17
I
F
20
20
20
20
20
mA
Luminous Intensity
I
V
Min
476
850
850
1530
850
Typ.
1500
2400
3000
4500
3000
mcd
I
F
20
20
20
20
20
mA
Forward Voltage
V
F
Typ.
1.9
1.9
1.9
2.0
2.0
V
Max
2.4
2.4
2.4
2.4
2.4
I
F
20
20
20
20
20
mA
Reverse Current
I
R
Max
50
50
50
50
50
μA
V
R
4
4
4
4
4
V
Precautions
Please be careful of the following:
•
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
•
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE)17TP(F)
TLRE17TP(F)
I
F
– V
F
100
Ta
=
25°C
50
10000
Ta
=
25°C
I
V
– I
F
V
30
Luminous intensity IV (mcd)
1.7
1.8
1.9
2.0
2.1
2.2
(mA)
Forward current IF
1000
10
5
3
100
1
1.6
2.3
10
1
3
5
10
30
50
100
Forward voltage VF
(V)
Forward current I
F
(mA)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity IV
1
Relative luminous intensity
−20
0
20
40
60
0.8
0.6
0.5
0.3
0.4
0.2
0.1
80
0
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
IF (mA)
80
I
F
– Ta
60
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE)17TP(F)
TLRME17TP(F)
I
F
– V
F
100
Ta
=
25°C
50
10000
Ta
=
25°C
I
V
– I
F
30
Luminous intensity IV (mcd)
1.7
1.8
1.9
2.0
2.1
2.2
Forward current IF
(mA)
1000
10
5
3
100
1
1.6
2.3
30
1
3
5
10
30
50
100
Forward voltage VF
(V)
Forward current I
F
(mA)
I
V
– Tc
10
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity IV
5
3
Relative luminous intensity
−20
0
20
40
60
0.8
0.6
1
0.5
0.3
0.4
0.2
0.1
80
0
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
IF (mA)
80
I
F
– Ta
60
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE)17TP(F)
TLSE17TP(F)
I
F
– V
F
100
Ta
=
25°C
50
10000
Ta
=
25°C
I
V
– I
F
30
Luminous intensity IV (mcd)
1.7
1.8
1.9
2.0
2.1
2.2
Forward current IF
(mA)
1000
10
5
3
100
1
1.6
2.3
30
3
5
10
30
50
100
Forward voltage VF
(V)
Forward current I
F
(mA)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity IV
1
Relative luminous intensity
−20
0
20
40
60
0.8
0.6
0.5
0.3
0.4
0.2
0.1
80
0
560
580
600
620
640
660
680
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
IF (mA)
80
I
F
– Ta
60
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2007-10-01
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