UPA1716G datasheet, PDF - EEWORLD Datasheet

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UPA1716G: DescriptionPower Field-Effect Transistor, 8A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8; CategoryDiscrete semiconductor The transistor; File Size67KB，8 Pages; ManufacturerNEC Electronics

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UPA1716G Overview

Power Field-Effect Transistor, 8A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

UPA1716G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.026 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

UPA1716G Preview

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1716

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management

applications of notebook computers.

FEATURES

•

Low on-resistance

DS(on)1

= 12.5 mΩ TYP. (V

= –10 V, I

= –4 A)

DS(on)2

= 17.0 mΩ TYP. (V

= –4.5 V, I

= –4 A)

DS(on)3

= 19.0 mΩ TYP. (V

= –4.0 V, I

= –4 A)

•

Low C

iss

: C

iss

= 2100 pF TYP.

•

Built-in G-S protection diode

•

Small and surface mount package (Power SOP8)

PACKAGE DRAWING (Unit : mm)

1,2,3 ; Source

; Gate

5,6,7,8 ; Drain

5.37 Max.

+0.10

–0.05

6.0 ±0.3

4.4

0.8

0.15

ORDERING INFORMATION

PART NUMBER

PACKAGE

Power SOP8

1.8 Max.

1.44

0.05 Min.

0.5 ±0.2

0.10

1.27 0.78 Max.

0.40

+0.10

–0.05

PA1716G

0.12 M

ABSOLUTE MAXIMUM RATINGS (T

= 25°C, All terminals are connected.)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC)

Drain Current (pulse)

Note1

Note2

EQUIVARENT CIRCUIT

Drain

DSS

GSS

D(DC)

D(pulse)

stg

–30

°C

Gate

Protection

Diode

Gate

2.0

150

–55 to +150

Body

Diode

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Source

Notes 1.

≤

s, Duty Cycle

≤

1 %

Mounted on ceramic substrate of 1200 mm x 1.0 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

G13727EJ1V0DS00 (1st edition)

Date Published March 1999 NS CP(K)

Printed in Japan

1998, 1999

PA1716

ELECTRICAL CHARACTERISTICS (T

= 25 °C, All terminals are connected.)

CHARACTERISTICS

Drain to Source On-state Resistance

SYMBOL

DS(on)1

DS(on)2

DS(on)3

Gate to Source Cut-off Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

GS(off)

| y

DSS

GSS

iss

oss

rss

d(on)

d(off)

F(S-D)

TEST CONDITIONS

–

10 V, I

–

4.0 A

–

4.5 V, I

–

4.0 A

–

4.0 V, I

–

4.0 A

–

10 V, I

–

1 mA

–

10 V, I

–

4.0 A

–

30 V, V

= 0 V

MIN.

TYP.

12.5

MAX.

UNIT

mΩ

–

1.0

–

1.6

–

2.5

–

20 V, V

= 0 V

2100

700

300

150

120

0.8

–

10 V

= 0 V

f = 1 MHz

–

4.0 A

GS(on)

–

10 V

–

15 V

= 10

Ω

–

8.0 A

–

24 V

–

10 V

= 8.0 A, V

= 0 V

= 8.0 A, V

= 0 V

di/dt = 100 A/

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

Wave Form

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

= 2 mA

10 %

90 %

GS (on)

90 %

PG.

= 10

Ω

PG.

Ω

Duty Cycle

≤

Wave Form

10 %

d (on)

d (off)

off

10 %

Data Sheet G13727EJ1V0DS00

PA1716

TYPICAL CHARACTERISTICS (T

= 25 °C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

2.8

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

dT - Percentage of Rated Power - %

- Total Power Dissipation - W

100

2.4

2.0

1.6

1.2

0.8

0.4

Mounted on ceramic

substrate of

1200mm

x 1.0mm

100 120 140 160

- Ambient Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

−100

D(pulse)

Remark

Mounted on ceramic substrate of

- Drain Current - A

1200 mm x 1.0 mm

−10

(DC)

iss

−1

= 25 ˚C

Single Pulse

−0.1

−1

ite

−10

−100

DS -

Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

th(t)

- Transient Thermal Resistance - ˚C/W

100

th(ch-A)

= 62.5˚C

Mounted on ceramic

substrate of 1200 mm

x 1.0 mm

Single Pulse

0.1

100

10 m

100 m

100

1000

PW - Pulse Width - s

Data Sheet G13727EJ1V0DS00

PA1716

FORWARD TRANSFER CHARACTERISTICS

−100

Pulsed

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Pulsed

- Drain Current - A

−10

−1

−25˚C

25˚C

75˚C

125˚C

150˚C

−40

−10

−30

−20

−10

−4.5

−4

−0.1

−10

−3.0

−4.0

−1.0

−2.0

−0.2

−0.4

−0.6

−0.8

Gate to Source Voltage - V

- Drain to Source Voltage - V

| - Forward Transfer Admittance - S

−10

Pulsed

100

DS(on)

- Drain to Source On-State Resistance - mΩ

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Pulsed

−50˚C

−25˚C

25˚C

75˚C

125˚C

150˚C

−4

−0.1

−1

−10

−100

−5

−10

−15

- Drain Current - A

- Gate to Source Voltage - V

DS(on)

- Drain to Source On-state Resistance - mΩ

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

GS(off)

- Gate to Source Cut-off Voltage - V

Pulsed

−2.0

−10

−1

−4

−4.5

−1.5

−1.0

−10

−0.5

−1

−10

- Drain Current - A

−100

−50

100

150

- Channel Temperature - ˚C

Data Sheet G13727EJ1V0DS00

PA1716

DS(on)

- Drain to Source On-state Resistance - mΩ

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

−50

100

−4

150

100

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

Pulsed

- Diode Forward Current - A

−4

−4.5

−10

0.1

0.5

1.0

1.5

- Channel Temperature - ˚C

- Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

1 000

d(on)

, t

d(off)

, t

- Switching Time - ns

iss

, C

oss

, C

rss

- Capacitance - pF

= 0 V

f = 1 MHz

iss

1 000

oss

rss

100

d(off)

100

d(on)

−15

−10

= 10Ω

−10

−100

−0.1

−1

−10

−0.1

−1

- Drain to Source Voltage - V

- Drain Current - A

REVERSE RECOVERY TIME vs.

DIODE CURRENT

- Drain to Source Voltage - V

- Reverse Recovery Time - ns

−30

100

−24

−15

−6

−12

−10

−20

−8

−6

−10

−4

−2

0.1

100

- Diode Current - A

- Gate Charge - nC

- Gate to Source Voltage - V

di/dt = 100 A/

= 0 V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

−40

−8.0

Data Sheet G13727EJ1V0DS00

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