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Datasheet> All Categories > LED optoelectronic/LED> photoelectric> TLP846(R)
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TLP846(R)

Description
Slotted Switch - Transistor Output, 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT, 3.50 X 2.60 MM, 2.90 MM HEIGHT, LEAD FREE, ULTRA COMPACT, 11-4H2, 4 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size211KB，7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

TLP846(R) Overview

Slotted Switch - Transistor Output, 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT, 3.50 X 2.60 MM, 2.90 MM HEIGHT, LEAD FREE, ULTRA COMPACT, 11-4H2, 4 PIN

TLP846(R) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction3.50 X 2.60 MM, 2.90 MM HEIGHT, ULTRA COMPACT, 11-4H2, 2 PIN
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min35 V
ConfigurationSINGLE
Maximum dark power100 nA
Maximum forward current0.03 A
gap size1.2 mm
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.05 A
Maximum on-state voltage35 V
Nominal on-state collector current50 mA
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Optoelectronic device typesTRANSISTOR OUTPUT SLOTTED SWITCH
Output circuit typeTransistor
Maximum response time0.00005 s
Nominal slot width1.2 mm
surface mountNO

TLP846(R) Preview

TLP846
TOSHIBA Photo-interrupter
Infrared LED+Phototransistor
TLP846
Still Camera and Digital Still Camera
Video Camera
Floppy Disk Drive
Personal Equipment and Small-sized OA Equipment
The TLP846 is photointerrupter which consists of a GaAs infrared LED and
an Si phototransistor.
It is an ultra compact package and has a wide gap width. More it has a
narrow slit and a high resolution.
•
•
•
•
•
•
Ultra compact package: 3.5×2.6×2.9mm
Gap width: 1.2 mm
High resolution: Slit width = 0.15 mm
High current transfer ratio: I
C
/I
F
= 3% (min)
Material of the package: Polybutylene terephthalate (UL94V-0)
Lead-free product
TOSHIBA
11-4H2
Weight: 0.035 g (typ.)
Maximum Ratings (Ta
=
25°C)
Characteristics
Forward current
Forward current derating
(Ta>25°C)
Reverse voltage
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector power dissipation
Collector power dissipation
derating
(Ta>25℃)
Collector current
Operating temperature range
Storage temperature range
Soldering temperature (5s)
(Note 1)
LED
Symbol
I
F
ΔI
F
/°C
V
R
V
CEO
V
ECO
P
C
ΔP
C
/°C
I
C
T
opr
T
stg
T
sol
Rating
30
−0.33
5
35
5
75
−1
50
−30
to 85
−40
to 100
260
Unit
mA
mA/°C
V
V
V
mW
mW/°C
mA
°C
°C
°C
Marking (Note 2)
Weekly code
Rank indication
Note 1 : At least 1mm from body.
Note 2 : It is composed of the Arabic numerals four digits, one digit from the left shows Rank indication and the rest
three digits show Weekly code.
※Rank
indication Without a mark : None
※Weekly
code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
R : R rank device
1
2004-01-23
TLP846
Optical and Electrical Characteristics
(Ta
=
25°C)
Characteristics
Forward voltage
LED
Reverse current
Peak emission wavelength
Detector
Dark current
Peak sensitivity wavelength
Current transfer ratio
Coupled
Collector-emitter saturation
voltage
Rise time
Fall time
Symbol
V
F
I
R
λ
P
I
D
(I
CEO
)
λ
P
I
C
/I
F
V
CE (sat)
t
r
t
f
V
CE
=
2 V
I
F
=
5 mA
I
F
=
10 mA
V
R
=
5 V
I
F
=
10 mA
V
CE
=
24 V, I
F
=
0
⎯
TLP846
TLP846 (R)
Test conditions
Min
1.00
⎯
⎯
⎯
⎯
3
4
⎯
⎯
⎯
Typ.
1.23
⎯
940
⎯
820
⎯
⎯
0.1
15
15
Max
1.40
10
⎯
0.1
⎯
24
20
0.4
50
50
Unit
V
μA
nm
μA
nm
%
V
μs
I
F
=
10 mA, I
C
=
0.25 mA
V
CE
=
5 V, I
C
=
1 mA, R
L
=
1 kΩ
(Note 3)
Note 3 : Switching time measurement circuit and waveform
V
CC
I
F
R
L
V
OUT
V
OUT
t
d
t
r
t
f
t
s
90%
10%
I
F
Precautions
•
When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the
whole package for cleaning.
Chemicals remaining on an LED or photo transistor light emitter or receiver, if any, would have a bad influence
to the optical characteristics and it may severely lower the conversion efficiency.
•
•
•
Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals may
cause the package to melt or crack.
The device should be mounted on an unwarped surface.
Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion
efficiency to fluctuation in infrared LED optical output is 1:1.
I
C
/I
F (t)
P
o (t)
=
I
C
/I
F (0)
P
o (0)
2
2004-01-23
TLP846
Package Dimensions: TOSHIBA 11-4H2
Unit: mm
Tolerance :
±0.2mm
unless otherwise specified
( ): Reference value
Center of sensor
Weight : 0.035g (typ.)
Pin Connection
2
1
3
4
1:
2:
3:
4:
Cathode
Anode
Collector
Emitter
3
2004-01-23
TLP846
I
F
– Ta
35
80
P
C
– Ta
Allowable collector power dissipation
P
C
(mW)
I
F
(mA)
30
25
20
15
10
5
0
0
20
40
60
80
100
60
Allowable forward current
40
20
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
F
– V
F
100
(typ.)
100
I
C
/ I
F
– I
F
Ta = 25°C
(typ.)
I
C
/I
F
(%)
Forward current I
F
(mA)
VCE = 2V
VCE = 0.4V
Current transfer ratio
Sample 2
10
10
Ta = 75°C
Sample 1
50 25 0
−25
1
0.9
1
1.1
1.2
1.3
1.4
1.5
1
1
10
100
Forward voltage V
F
(V)
Forward current I
F
(mA)
I
C
– I
F
10
(typ.)
4
I
C
– V
CE
Ta = 25°C
3.5
(typ.)
20
Ta = 25°C
VCE = 2V
VCE = 0.4V
1
(mA)
(mA)
3
2.5
2
Collector current I
C
Sample 1
Collector current I
C
Sample 2
15
10
1.5
1
0.5
0.1
IF = 5mA
0.01
1
10
100
0
0
2
4
6
8
10
12
Forward current I
F
(mA)
Collector-emitter voltage
V
CE
(V)
4
2004-01-23
TLP846
Relative I
C
– Ta
1.2
(typ.)
100
I
D
(I
CEO
) – Ta
VCE = 24V
(typ.)
1
Relative collector current
10
0.8
Dark current I
D
(I
CEO
)
0.6
(μA)
1
VCE = 2V
0.4
0.1
IF = 20mA
IF = 10mA
IF = 5mA
0.01
0.2
-40
-20
0
20
40
60
80
100
0.001
Ambient temperature Ta (°C)
0.0001
0.00001
V
CE (sat)
– Ta
0.20
IC = 0.15mA
IF = 10mA
0.16
(typ.)
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Collector-emitter saturation voltage
V
CE(sat) (V)
0.12
0.08
0.04
0.00
-40
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Switching characteristics
(saturated operation)
1000
(typ.)
1000
t
f
Ta = 25°C
VCC = 5V
VOUT = 1V
Switching characteristics
(non saturated operation)
t
r,
t
f
(typ.)
Ta = 25°C
IF = 20mA
VCC = 5V
VOUT
≧
4.65V
100
t
s
Switching time (μs)
100
Switching time (μs)
t
d
10
t
s
10
t
r
1
t
d
1
1
10
100
0.1
0.1
1
10
100
Load resistance R
L
(kΩ)
Load resistance R
L
(kΩ)
5
2004-01-23
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