Data Sheet
Schottky Barrier Diode
RB055L-30
lApplications
General rectification
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
2.0
2.6±0.2
lFeatures
1)Small power mold type. (PMDS)
2)High reliability
3)Low V
F
1.2±0.3
2.0
4.5±0.2
4
①
5
②
0.1±0.02
0.1
5.0±0.3
1.5±0.2
2.0±0.2
PMDS
lConstruction
Silicon epitaxial planer
ROHM : PMDS
①
②
Manufacture Date
lStructure
lTaping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ
1.55±0.05
1.75±0.1
4.2
0.3
5.5±0.05
φ
1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive peak)
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounted on Alumina board, Tc=110°C MAX.
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltagae
Reverse current
I
R
Limits
30
30
3
55
150
-55
to
+150
Unit
V
V
A
A
C
C
Min.
-
-
Typ.
-
-
Max.
0.55
50
Unit
V
μA
Conditions
I
F
=3.0A
V
R
=30V
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© 2011 ROHM Co., Ltd. All rights reserved.
5.3±0.1
0.05
9.5±0.1
1/4
2011.10 - Rev.A
12±0.2
RB055L-30
Data Sheet
10
Ta=150°C
100000
Ta=125°C
Ta=100°C
10000
REVERSE CURRENT:I
R
(mA)
Ta=150°C
1
FORWARD CURRENT:I
F
(A)
Ta=125°C
0.1
Ta=100°C
1000
Ta=75°C
0.01
100
Ta=75°C
10
Ta=25°C
0.001
Ta=25°C
0.0001
0
100
200
300
400
500
600
700
800
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0
10
20
30
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
f=1MHz
FORWARD VOLTAGE:V
F
(mV)
500
495
490
485
480
475
470
465
460
455
AVE:479.1mV
Ta=25°C
I
F
=3A
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
10
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
450
V
F
DISPERSION MAP
14
Ta=25°C
V
R
=30V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
490
480
470
460
450
440
430
AVE：444.8pF
420
410
400
f=1MHz
V
R
=0V
13
REVERSE CURRENT:I
R
(mA)
12
11
10
AVE:10.66mA
9
8
I
R
DISPERSION MAP
390
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
RB055L-30
Data Sheet
250
30
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
200
25
20
150
AVE：155.5A
100
15
10
AVE:11.5ns
5
I
FSM
50
8.3ms 8.3ms
1cyc
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
1000
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms 8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
100
250
200
150
100
100
50
10
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
100
FORWARD POWER
DISSIPATION:Pf(W)
0.25
0.2
D.C.
D=1/2
Sin(θ＝180)
0.15
Rth(j-c)
10
0.1
1
0.05
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
RB055L-30
Data Sheet
5
6
0A
0V
D.C.
t
T
Io
V
R
D=t/T
V
R
=15V
Tj=150°C
4
REVERSE POWER
DISSIPATION:P
R
(W)
DC
3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
5
4
D=1/2
3
Sin(θ＝180)
2
2
D=1/2
1
Sin(θ＝180)
1
0
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
30
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
20
15
10
AVE:12.15kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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