Data Sheet
Schottky Barrier Diode
RB068L-40
lApplications
General rectification
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
2.0
2.0
2.6±0.2
4.5±0.2
2
7
3)High reliability
①
②
0.1±0.02
0.1
5.0±0.3
lFeatures
1)Small power mold type. (PMDS)
2)Ultra Low I
R
1.2±0.3
1.5±0.2
2.0±0.2
PMDS
lStructure
Silicon epitaxial planer
ROHM : PMDS
JEDEC : SOD-106
①
②
dot (year week factory)
lStructure
lTaping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ
1.55±0.05
0.3
5.5±0.05
1.75±0.1
φ
1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Limits
40
40
2
40
125
-40
to
+150
Unit
V
V
A
A
C
C
Min.
-
-
Typ.
-
-
Max.
0.69
1
Unit
V
mA
I
F
=2.0A
V
R
=40V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
5.3±0.1
0.05
9.5±0.1
1/4
2011.12 - Rev.A
12±0.2
4.2
RB068L-40
Data Sheet
10000
Ta=150°C
FORWARD CURRENT:I
F
(mA)
1000
Ta=125°C
REVERSE CURRENT:I
R
(mA)
1000
Ta=150°C
100
10
100
Ta=75°C
Ta=25°C
Ta=125°C
Ta=75°C
1
10
0.1
Ta=25°C
Ta=-25°C
1
0.01
0.1
0
100
200
300
400
500
600
700
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.001
0
10
20
30
40
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
f=1MHz
700
680
FORWARD VOLTAGE:V
F
(mV)
Ta=25°C
I
F
=2A
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
660
640
620
600
AVE:621.1mV
580
560
100
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
540
V
F
DISPERSION MAP
100
90
REVERSE CURRENT:I
R
(nA)
80
70
60
50
40
30
20
10
0
I
R
DISPERSION MAP
AVE:55.667nA
Ta=25°C
V
R
=40V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
600
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
500
400
300
AVE:328.0pF
200
100
Ct DISPERSION MAP
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2/4
2011.12 - Rev.A
RB068L-40
Data Sheet
200
Ifsm
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
150
1cyc
30
Ta=25°C
I
F
=0.1A
I
R
=0.11A
Irr=0.1*I
R
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
25
8.3ms
20
100
AVE:111.0A
15
AVE:16.2ns
10
50
5
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
200
Ifsm
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
150
8.3ms 8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
300
250
Ifsm
t
200
100
150
100
50
50
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
Mounted on epoxy board
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
100
FORWARD POWER
DISSIPATION:Pf(W)
3
2
D=1/2
Rth(j-c)
10
Sin(θ＝180)
DC
1
1
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
1
TIME:t(s)
Rth-t CHARACTERISTICS
2
3
4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
5
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3/4
2011.12 - Rev.A
RB068L-40
Data Sheet
0.05
5
0A
0V
Io
t
T
3
DC
D=1/2
2
V
R
D=t/T
V
R
=20V
Tj=150°C
0.04
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:P
R
(W)
4
0.03
0.02
DC
Sin(θ＝180)
D=1/2
0.01
1
Sin(θ＝180)
0
0
10
20
30
40
0
0
25
50
75
100
125
150
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
5
0A
0V
t
Io
V
R
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
D=t/T
V
R
=20V
Tj=150°C
30
No break at 30kV
25
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
4
DC
3
D=1/2
2
T
20
15
AVE:17.6kV
10
1
Sin(θ＝180)
5
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
0
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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