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RCD080N25

Description
10V Drive Nch MOSFET
File Size1MB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RCD080N25 Overview

10V Drive Nch MOSFET

Data Sheet
10V Drive Nch MOSFET
RCD080N25
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
1.5
5.5
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
0.9 2.3
(1)
(2)
(3)
2.3
0.8Min.
0.65
0.5
1.0
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RCD080N25
Taping
TL
2500
Inner circuit
∗1
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 L
500H, V
DD
=50V, R
G
=25, T
ch
=25C
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
Limits
250
30
8
32
8
32
4
4.67
20
150
55
to
150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
1
BODY DIODE
V
DSS
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
I
DP
I
S
I
SP
I
AS
E
AS
P
D
Tch
Tstg
*3
*1
*3
*1
*2
*2
*4
*3 Limited only by maximum channel temperature allowed.
*4 T
C
=25C
Thermal resistance
Parameter
Channel to Case
* T
C
=25°C
* Limited only by maximum channel temperature allowed.
Symbol
Rth (ch-c)
*
Limits
6.25
Unit
C
/ W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.11 - Rev.A
2.5
0.75
0.9
1.5
9.5
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