EEWORLDEEWORLDEEWORLD

Part Number

Search

LRK7002WT1G

Description
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size570KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LRK7002WT1G Overview

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

LRK7002WT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.115 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.225 W
surface mountYES

LRK7002WT1G Preview

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
Silicon N-Channel
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low-voltage drive.
4) Easily designed drive circuits.
5) Easy to parallel.
6) Pb-Free package is available.
LRK7002WT1G
3
1
2
SOT-23 (TO-236AB)
3
Device Marking and Ordering Information
1
Device
Marking
6C
6C
Shipping
3000/Tape&Reel
10000/Tape&Reel
∗Gate
Protection
Diode.
LRK7002WT1G
LRK7002WT3G
6C
2
°
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Drain reverse current
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
1
I
DR
I
DRP
1
P
D
2
Tch
Tstg
Limits
60
±20
115
0.8
115
0.8
225
150
−55~+
150
Unit
V
V
mA
A
mA
A
mW
°C
°C
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
When
mounted on a
1×0.75×0.062 inch glass epoxy board.
1/4
LESHAN RADIO COMPANY, LTD.
LRK7002WT1G
°
Parameter
Gate-source leakage current
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Min.
60
1
80
Typ.
1.85
25
10
3.0
12
20
Max.
±10
1
2.5
7.5
7.5
50
25
5.0
20
30
Unit
µA
V
µA
V
mS
pF
pF
pF
ns
ns
Test Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=10µA,
V
GS
=0V
V
DS
=60V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=0.5A,
V
GS
=10V
I
D
=0.05mA,
V
GS
=5V
V
DS
=10V,
I
D
=0.2A
V
DS
=25V
V
GS
=0V
f=1MHz
I
D
=200mA,
V
DD
30V
V
GS
=10V,
R
L
=150Ω
,R
GS
=10Ω
Drain-source on-state resistance R
DS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
P
W
≤300µs,
Duty cycle≤1%
l Y
fs
l
C
iss
C
oss
C
rss
t
d (on)
t
d (off)
curve
2/4
LESHAN RADIO COMPANY, LTD.
LRK7002WT1G
curve
(continues)
Switching
s measurement circuit
3/4
LESHAN RADIO COMPANY, LTD.
LRK7002WT1G
SC−70 (SOT−323)
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
XX
M
XX
M
1
= Specific Device Code
= Date Code
= Pb−Free Package
G
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
4/4
LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
A
20.2mm Min
(.795’’)
50mm Min
(1.969’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
8 mm
12mm
16mm
24 mm
A Max
330mm
(12.992’’)
330mm
(12.992’’)
360mm
(14.173’’)
360mm
(14.173’’)
G
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
12.4mm+2.0mm, -0.0
(.49 ’’+ .079’’, -0.00)
16.4mm+2.0mm, -0.0
(.646’’+.078’’, -0.00)
24.4mm+2.0mm, -0.0
(.961’’+.070’’, -0.00)
T Max
14.4mm
(.56’’)
18.4mm
(.72’’)
22.4mm
(.882’’)
30.4mm
(1.197’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)

LRK7002WT1G Related Products

LRK7002WT1G LRK7002WT3G
Description Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to conform to
Maker LRC LRC
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 0.115 A 0.115 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.225 W 0.225 W
surface mount YES YES

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 900  2352  204  1238  742  19  48  5  25  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号