Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1585
DESCRIPTION
・With
TO-220Fa package
・V
CEO
≥60V;V
EBO
≥7V;I
C(DC)
≤3.0A
・Complement
to type 2SB1094
APPLICATIONS
・For
use in audio frequency power
amplifier and general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
a
=25℃
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
7
3
5
0.6
2.0
15
150
-55~150
UNIT
V
V
V
A
A
A
W
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=30mA; I
B
=0
I
C
=2A I
B
=0.2A
I
C
=2A I
B
=0.2A
V
CB
=60V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=50mA ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
C
=0.1A; V
CE
=5V
f=1MHz ; V
CB
=10V
20
40
16
48
MIN
60
TYP.
2SD1585
MAX
UNIT
V
1.5
2.0
10
10
V
V
μA
μA
200
MHz
pF
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1585
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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