The DG9432, DG9433, DG9434 is a dual single-pole/single-
throw monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, high speed (t
ON
: 25 ns, t
OFF
: 20 ns), the DG9432,
DG9433, DG9434 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG9432, DG9433, DG9434 is built on Vishay Siliconix’s
low voltage BCD-15 process. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG9432,
DG9433, DG9434.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FEATURES
•
•
•
•
Wide operation voltage (+ 2.7 V to + 12 V)
Low charge injection - Q
INJ
: 1 pC
Low power consumption
TTL/CMOS logic compatible over the full
operating voltage range
• Available in MSOP-8 and SOT23-8
•
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
Reduced power consumption
Simple logic interface
High accuracy
Reduce board space
APPLICATIONS
•
•
•
•
•
•
•
Battery operated systems
Portable test equipment
Sample and hold circuits
Cellular phones
Communication systems
Military radio
PBX, PABX guidance and control systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
- DG9432
DG9432, MSOP-8
NC
1
COM
1
IN
2
GND
1
2
3
4
Top View
Device Marking:
9432
8
7
6
5
V+
IN
1
COM
2
NC
2
NC
1
DG9432, SOT23-8
1
2
3
4
Top View
Device Marking:
4G
8
7
6
5
COM
1
IN
1
GND
NC
2
V+
IN
2
COM
2
TRUTH TABLE
DG9432
Logic
0
1
Switch
On
Off
Document Number: 72311
S11-1029-Rev. B, 23-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9432, DG9433, DG9434
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG9433/DG9434
DG9433, MSOP-8
NO
1
COM
1
IN
2
GND
1
2
3
4
Top View
Device Marking:
9433
8
7
6
5
V+
IN
1
COM
2
NO
2
NO
1
V+
IN
2
COM
2
1
2
3
4
DG9433. SOT23-8
8
7
6
5
Top View
Device Marking:
4H
COM
1
IN
1
GND
NO
2
TRUTH TABLE
DG9433
Logic
0
1
Switch
Off
On
DG9434, MSOP-8
NO
COM
1
IN
2
GND
1
2
3
4
Top View
Device Marking:
9434
8
7
6
5
V+
IN
1
COM
2
NC
2
NO
1
V+
IN
2
COM
2
1
2
3
4
DG9434. SOT23-8
8
7
6
5
Top View
Device Marking:
4I
COM
1
IN
1
GND
NC
2
TRUTH TABLE
DG9434
Logic
0
1
Switch-1
Off
On
Switch-2
On
Off
ORDERING INFORMATION
Temp. Range
Package
MSOP-8
- 40 °C to 85 °C
SOT23-8
Part Number
DG9432DQ-T1-E3
DG9433DQ-T1-E3
DG9434DQ-T1-E3
DG9432DS-T1-E3
DG9433DS-T1-E3
DG9433DS-T1-E3
www.vishay.com
2
Document Number: 72311
S11-1029-Rev. B, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9432, DG9433, DG9434
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Limit
- 0.3 to + 13.5
- 0.3 to (V+ + 0.3)
± 10
± 20
- 65 to 150
MSOP-8
c
SOT23-8
c
320
515
Unit
V
mA
°C
mW
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D suffix)
Power Dissipation (Packages)
b
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
SPECIFICATIONS
V+ = 3 V
Test Conditions
Otherwise Unless Specified
V+ = 3.3 V, ± 10 %
,
V
IN
= 0.4 V or 1.8 V
e
Limits
- 40 °C °C to 85 °C
Temp.
a
Full
V+ = 2.7 V, I
COM
= 1 mA, V
COM
= 1.5 V
Room
Full
Room
Full
Full
-1
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
1
60
14
0.16
77
55
98
7.5
7.8
22
pF
dB
80
100
25
35
1.8
0.4
1
Min.
c
V-
81
0.4
Typ.
b
Max.
c
V+
100
120
3.0
V
Unit
Parameter
Switch On Resistance
Analog Signal Range
e
Drain-Source On- Resistance
R
ON
Match
d
Symbol
V
ANALOG
R
(on)
R
on
V
INH
V
INL
I
INH
Digital Control
Input, High Voltage
Input, Low Voltage
Input Current
Dynamic Characteristics
Break-Before-Make
d,g
Turn-On
Turn-Off
Time
d
Time
d
t
OPEN
t
ON
t
OFF
Q
OIRR
X
TALK
C
NO/NC(off)
C
COM(off)
C
COM(on)
C
L
= 1 nF, R
GEN
= 0
,
V
g
= 0 V
C
L
= 5 pF, R
L
= 50
,
f = 1 MHz
C
L
= 5 pF, R
L
= 50
,
f = 10 MHz
R
L
= 50
,
f = 1 MHz, V+ = 2.5 V
f = 1 MHz, V
NC/NO
= 0 V
f = 1 MHz V
COM
= 0 V
V+ = 3 V, R
L
= 300
V
NO
= V
NC
= 1.5 V
C
L
= 35 pF, V
IN
= 0 V, 3 V
V+ Ranges 2.7 to 5 V
V
µA
ns
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source Off Capacitance
d
Drain Off Capacitance
d
Drain On Capacitance
d
pC
V+ = 3.3 V, V
IN
= 0 or V+
Room
-1
-1
µA
Supply Current
I+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 12 V leakage testing, not production tested.
g. Applies for DG9434 only.
Document Number: 72311
S11-1029-Rev. B, 23-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9432, DG9433, DG9434
Vishay Siliconix
SPECIFICATIONS
V+ = 5 V
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %
,
V
IN
= 0.4 V or 1.8 V
e
Limits
- 40 °C °C to 85 °C
Temp.
a
Full
V+ = 4.5 V, I
COM
= 1 mA
V
COM
= 2.5 V or 3.5 V
V+ = 4.5 V, I
COM
= 1 mA, V
COM
= 3.5 V
Room
Full
Room
Room
Full
V+ = 5 V, V
COM
= 0.5 V, 4.5 V
V
NC/NO
= 4.5 V, 0.5 V
Room
Full
Room
Full
Full
Full
-1
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
-1
1
33
10
0.56
76
54
96
7.5
7.8
22
-1
µA
pF
dB
60
70
20
30
pC
ns
-1
- 10
-1
- 10
-1
- 10
1.8
0.4
1
Min.
c
V-
39
0.3
0.3
0.3
0.3
Typ.
b
Max.
c
V+
60
70
3.0
1
10
1
10
1
10
nA
V
Unit
Parameter
Switch On Resistance
Analog Signal Range
e
Drain-Source On-Resistance
R
DS(on)
Match
Switch Off Leakage Current
f
Symbol
V
ANALOG
R
(on)
R
(on)
I
NC/NO(off)
I
COM(off)
Channel On Leakage Current
f
Digital Control
Input, High Voltage
Input, Low Voltage
Input Current
Dynamic Characteristics
Break-Before-Make
d,g
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source Off Capacitance
d
Drain Off Capacitance
d
Drain On Capacitance
d
Supply Current
I
COM(on)
V
INH
V
INL
I
INH
V+ Ranges 2.7 to 5 V
V
µA
t
OPEN
t
ON
t
OFF
Q
OIRR
X
TALK
C
NC/NO(off)
C
COM(off)
C
COM(on)
I+
V+ = 5 V, R
L
= 300
V
NO
= V
NC
= 3 V
C
L
= 35 pF, V
IN
= 0 V, 5 V
C
L
= 1 nF, R
GEN
= 0
,
V
g
= 0 V
C
L
= 5 pF, R
L
= 50
,
f = 1 MHz
C
L
= 5 pF, R
L
= 50
,
f = 10 MHz, V+ = 5 V
R
L
= 50
,
f = 1 MHz, V+ = 5 V
f = 1 MHz, V
NC/NO
= 0 V
f = 1 MHz, V
COM
= 0 V
V+ = 5.5 V, V
IN
= 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 12 V leakage testing, not production tested.
g. Applies for DG9434 only.
www.vishay.com
4
Document Number: 72311
S11-1029-Rev. B, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9432, DG9433, DG9434
Vishay Siliconix
SPECIFICATIONS
V+ = 12 V
Test Conditions
Otherwise Unless Specified
V+ = 12 V, ± 10 %
,
V
IN
= 0.8 V or 2.4 V
e
Limits
- 40 °C °C to 85 °C
Temp.
a
Full
V+ = 10.8 V, I
COM
= 1 mA, V
COM
= 9 V
Room
Full
Room
Room
Full
V+ = 12 V, V
S
= 1/11 V, V
COM
= 11/1 V
Room
Full
Room
Full
Full
Full
0.8
-1
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
-1
1
21
6
0.36
75
53
96
7.5
7.8
22
-1
µA
pF
dB
35
40
18
25
pC
ns
1
-1
- 10
-1
- 10
-1
- 10
Min.
c
V-
19
0.3
0.3
0.3
0.3
Typ.
b
Max.
c
V+
30
40
3.0
1
10
1
10
1
10
2.4
nA
V
Unit
Parameter
Switch On Resistance
Analog Signal Range
e
Drain-Source On-Resistance
R
DS(on)
Match
Switch Off Leakage Current
a
Symbol
V
ANALOG
R
(on)
R
(on)
I
NC/NO(off)
I
COM(off)
Channel On Leakage Current
a
Digital Control
Input, High Voltage
Input, Low Voltage
Input Current
Dynamic Characteristics
Break-Before-Make
d,g
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source Off Capacitance
d
Drain Off Capacitance
d
Drain On Capacitance
d
Supply Current
I
COM(on)
V
INH
V
INL
I
INH
V+ = 12 V
V
µA
t
OPEN
t
ON
t
OFF
Q
OIRR
X
TALK
C
NO/NC(off)
C
COM(off)
C
COM(on)
I+
V+ = 12 V, R
L
= 300
V
NO
= V
NC
= 8 V
C
L
= 35 pF, V
IN
= 0 V, 12 V
C
L
= 1 nF, R
GEN
= 0
,
V
g
= 0 V, V+ = 5 V
C
L
= 5 pF, R
L
= 50
,
f = 1 MHz
C
L
= 5 pF, R
L
= 50
,
f = 10 MHz
R
L
= 50
,
f = 1 MHz, V+ = 5 V
f = 1 MHz, V
NC/NO
= 0 V
f = 1 MHz, V
COM
= 0 V
V+ = 12 V, V
IN
= 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 12 V leakage testing, not production tested.
g. Applies for DG9434 only.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72311
S11-1029-Rev. B, 23-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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