EEWORLDEEWORLDEEWORLD

Part Number

Search

MPS6724RL1

Description
1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size329KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MPS6724RL1 Overview

1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

MPS6724RL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AE, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)4000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
MPS6724
MPS6725
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPS6724
40
50
12
1000
1.0
8.0
2.5
20
– 55 to +150
MPS6725
50
60
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPS6724
MPS6725
IEBO
V(BR)CES
MPS6724
MPS6725
V(BR)CBO
MPS6724
MPS6725
V(BR)EBO
ICBO
100
100
100
nAdc
50
60
12
Vdc
nAdc
40
50
Vdc
Vdc
v
300
m
s; Duty Cycle
v
2.0%.
REV 1
2–608
Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS6724RL1 Related Products

MPS6724RL1 MPS6725ZL1 MPS6725RL MPS6725RLRA MPS6725RLRM MPS6725RL1 MPS6724RLRM MPS6725RLRE MPS6724ZL1
Description 1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal 1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN 1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction PLASTIC, TO-226AE, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 40 V 50 V 50 V 50 V 50 V 50 V 40 V 50 V 40 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 4000 4000 4000 4000 4000 4000 4000 4000 4000
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Maker ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Other features EUROPEAN PART NUMBER EUROPEAN PART NUMBER EUROPEAN PART NUMBER - - EUROPEAN PART NUMBER - - EUROPEAN PART NUMBER
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C - 150 °C 150 °C

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 504  2607  169  2151  1692  11  53  4  44  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号