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DL4150

Description
0.2 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size581KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

DL4150 Overview

0.2 A, SILICON, SIGNAL DIODE

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
DL4150
Features
Maximum Ratings
@ 25℃ Unless Otherwise Specified
Parameter
Working Inverse Voltage
Maximum Rectified
Current (Average)
DC Forward Current
Recurrent Peak Forward
Current
Peak Forward Surge
Current
Storage Temperature
Range
Operating Junction
Temperature
For general purpose and switching
Silicon Epitaxial Planar Diodes
These diodes are also available in other case styles including: the
DO-35 case with the type designations 1N4150, the SOD-123 case
with the type designations 1N4150W
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
200mA
Small Signal
Diodes
50 Volts
MINIMELF(SOD-80C)
Cathode Mark
Symbol
W
IV
I
o
I
F
i
f
i
f(surge)
T
stg
T
J
Value
50V
200mA
400mA
600mA
1.0A
4.0A
-65℃to +200℃
175℃
Condition
C
B
Pulse Width=1.0s
Pulse Width=1.0μs
A
DIMENSION
Thermal Characteristics @ 25°C Unless Otherwise Specified
Total Device Dissipation
Derate above 25℃
Thermal Resistance,
Junction to Ambient
P
D
R
θ
JA
500mW
3.33mW/℃
300℃/W
DIM
A
B
C
INCHES
MIN
.130
.008
.055
MAX
.146
.016
.059
MIN
3.30
0.20
1.40
MM
MAX
3.70
0.40
1.50
NOTE
Note:1.Lead in Glass Exemption Applied, see EU Directive Annex 5.
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
Revision: A
www.mccsemi.com
1
of
3
2011/01/01

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