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BSC360N15NS3G

Description
OptiMOSTM3 Power-Transistor
CategoryDiscrete semiconductor    The transistor   
File Size569KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSC360N15NS3G Overview

OptiMOSTM3 Power-Transistor

BSC360N15NS3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC, TDSON-8
Contacts8
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)80 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)33 A
Maximum drain current (ID)33 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)132 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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