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BSO612CVG

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size284KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSO612CVG Overview

POWER, FET

BSO612CVG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)47 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level3
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)12 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
Rev. 2.0
BSO 612 CV
G
SIPMOS
®
Small-Signal-Transistor
Product Summary
Features
·
Dual N- and P -Channel
·
N
P
-60
0.3
-2
V
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
V
DS
R
DS(on)
I
D
60
0.12
3
W
A
Enhancement mode
·
Avalanche rated
·
Pb-free lead plating;RoHS compliant
Type
BSO 612 CV
Package
PG-DSO-8
Marking
612CV
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
N
Continuous drain current
Value
P
Unit
A
I
D
3
2.4
-2
-1.6
-8
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
I
D puls
E
AS
12
T
A
= 25 °C
Avalanche energy, single pulse
I
D
= 3 A,
V
DD
= 25 V,
R
GS
= 25
W
mJ
47
-
-
70
0.2
kV/µs
6
-
-
6
±20
2
V
W
I
D
= -2 A,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt,
T
jmax
= 150 °C
E
AR
dv/dt
0.2
I
S
= 3 A,
V
DS
= 48 V, di/dt = 200 A/µs
I
S
= -2 A,
V
DS
= -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
V
GS
P
tot
±20
2
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55...+150
55/150/56
°C
Page 1
2006-08-25
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