BSP171P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
Ω
A
PG-SOT-223
Type
BSP 171 P
Package
PG-SOT-223
Tape and Reel Information
L6327:
1000 pcs/reel
Marking
171P
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
1)
T
A
=70 °C
1)
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-1.9 A,
R
GS
=25
Ω
I
D
=-1.9 A,
V
DS
=-48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
-1.9
-1.5
-7.6
70
mJ
A
Unit
Reverse diode dv /dt
dv /dt
-6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
1)
±20
1.8
-55 ... 150
55/150/56
V
W
°C
Rev 2.4
page 1
2007-02-08
BSP171P
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
R
thJS
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
steady state
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=-460 µA
V
DS
=-60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-4.5 V,
I
D
=-1.5 A
V
GS
=-10 V,
I
D
=-1.9 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.5 A
-60
-1
-
-1.5
-
-2
V
-
-
25
K/W
Values
typ.
max.
Unit
R
thJA
-
-
110
-
-
70
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-10
0.3
-100
-100
0.45
nA
Ω
-
0.21
0.3
1.4
2.7
-
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Rev 2.4
page 2
2007-02-08
BSP171P
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
A
=25 °C
V
GS
=0 V,
I
F
=1.9 A,
T
j
=25 °C
-
-
-
-
-
-0.84
-1.9
-7.6
-1.1
V
A
Q
gs
Q
gd
Q
g
V
plateau
Q
oss
V
DD
=-15 V,
V
GS
=0 V
V
DD
=-48 V,
I
D
=1.9 A,
V
GS
=0 to -10 V
-
-
-
-
-
-1.2
-5
-13
-3
-5
-1.6
-7
-20
-
-7
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-25 V,
V
GS
=-10 V,
I
D
=-1.9 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
365
105
40
6
25
208
87
460
135
55
8
33
276
130
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
V
R
=-30 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
-
80
120
ns
Reverse recovery charge
Q
rr
-
-125
-190
nC
2)
See figure 16 for gate charge parameter definition
Rev 2.4
page 3
2007-02-08
BSP171P
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
); |V
GS
|≥10 V
2
2
1.5
1.5
P
tot
[W]
-I
D
[A]
1
1
0.5
0.5
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
1)
;
D
=0
parameter:
t
p
10
1
10 µs
100 µs
1 ms
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
0.5
10 ms
0.2
10
0
100 ms
10
1
0.1
Z
thJS
[K/W]
-I
D
[A]
0.05
limited by on-state
resistance
0.02
10
-1
DC
10
0
0.01
single pulse
10
-2
0.1
1
10
100
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 2.4
page 4
2007-02-08
BSP171P
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
5
-5.5 V
-5 V
-10 V
-4.5 V
-4 V
-3 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
600
4
500
-3.5 V
400
R
DS(on)
[m
Ω
]
3
-4 V
-4.5 V
-5 V
-5.5 V
-10 V
-I
D
[A]
-3.5 V
300
2
200
-3 V
1
100
-2.5 V
0
0
1
2
3
4
5
0
0
1
2
3
4
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
6
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
5
5
4
4
3
-I
D
[A]
3
g
fs
[S]
2
1
C °125
C °25
2
1
0
0
1
2
3
4
5
0
0
1
2
3
4
-V
GS
[V]
-I
D
[A]
Rev 2.4
page 5
2007-02-08
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