BSP 298
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
•
V
GS(th)
= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
400 V
Pb-free
Yes
I
D
0.5 A
R
DS(on)
3
Ω
Package
Marking
BSP 298
Type
BSP 298
SOT-223
BSP 298
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 26 °C
I
D
A
0.5
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
2
E
AS
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 125 mH,
T
j
= 25 °C
mJ
130
V
GS
P
tot
Gate source voltage
Power dissipation
T
A
= 25 °C
±
20
1.8
V
W
Rev. 2.2 Semiconductor Group
1
2007-02-26
BSP 298
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJS
-55 ... + 150
-55 ... + 150
°C
≤
70
≤
10
E
55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Values
typ.
max.
Unit
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 °C
V
(BR)DSS
V
400
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
I
DSS
3
4
µA
Zero gate voltage drain current
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 125 °C
-
-
I
GSS
0.1
10
1
100
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.5 A
Ω
-
2.2
3
Rev. 2.2 Semiconductor Group
2
2007-02-26
BSP 298
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.5 A
g
fs
S
0.5
1.2
-
pF
-
300
400
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
50
75
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
20
30
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
r
10
15
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
d(off)
25
40
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
f
30
40
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
20
30
Rev. 2.2 Semiconductor Group
3
2007-02-26
BSP 298
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
A
= 25 °C
I
S
A
-
-
0.5
Inverse diode direct current,pulsed
T
A
= 25 °C
I
SM
-
V
SD
-
2
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 1 A,
T
j
= 25 °C
-
t
rr
0.95
1.2
ns
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
Q
rr
300
-
µC
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
2.5
-
Rev. 2.2 Semiconductor Group
4
2007-02-26
BSP 298
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.55
A
I
D
0.45
0.40
0.35
2.0
W
P
tot
1.6
1.4
1.2
0.30
1.0
0.25
0.8
0.20
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
°C
160
0.15
0.10
0.05
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0,
T
C
=25°C
Transient thermal impedance
Z
th JA
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
2
K/W
10
1
Z
thJC
10
0
10
-1
D = 0.50
0.20
0.10
10
-3
10
-2
0.05
single pulse
0.02
0.01
10
-4
10
-5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
t
p
Rev. 2.2 Semiconductor Group
5
2007-02-26
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