BSP321P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Product Summary
V
DS
R
DS(on),max
I
D
-100
900
-0.98
V
mΩ
A
PG-SOT-223
Type
BSP321P
Package
PG-SOT-223
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
BSP321P
Lead free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=70 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114-HBM
T
C
=25 °C
T
C
=25 °C
I
D
=-0.98 A,
R
GS
=25
Ω
Value
-0.98
-0.79
-3.9
57
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
mJ
V
W
°C
Unit
A
Rev 1.04
page 1
2011-04-05
BSP321P
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
steady state
Values
typ.
max.
Unit
R
thJA
-
-
115
-
-
70
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=V
GS
,I
D
=-380 µA
V
DS
=-100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-100 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-10 V,
I
D
=-0.98 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-0.79 A
-100
-2.1
-
-3.0
-
-4
V
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-10
689
-100
-100
900
nA
mΩ
Transconductance
g
fs
0.6
1.2
-
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Rev 1.04
page 2
2011-04-05
BSP321P
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
R
=50 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
V
GS
=0 V,
I
F
=0.98 A,
T
j
=25 °C
T
C
=25 °C
-
-
-
-
-
-
-
0.84
47
96
-0.98
-3.9
1.2
-
-
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-80 V,
I
D
=-
0.98 A,
V
GS
=0 to -10 V
-
-
-
-
1.1
4
9
4.5
1.4
6
12
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-50 V,
V
GS
=-
10 V,
I
D
=-0.98 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
240
62
28
5.9
4.4
16.5
8.5
319
82
42
8.8
6.6
24.7
12.7
ns
pF
Values
typ.
max.
Unit
2)
See figure 16 for gate charge parameter definition
Rev 1.04
page 3
2011-04-05
BSP321P
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
); |V
GS
|≥10 V
2
1
0.8
1.5
0.6
P
tot
[W]
1
-I
D
[A]
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
0.5
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
1
limited by on-state
resistance
100 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
2
0.5
0.2
10
0
1 ms
10
1
0.1
Z
thJS
[K/W]
-I
D
[A]
0.05
10 ms
0.02
10
-1
DC
100 ms
10
0
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 1.04
page 4
2011-04-05
BSP321P
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
4
-10 V
-6 V
-7 V
-5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
2
-4 V
-4.5 V
3
1.6
2
R
DS(on)
[
Ω
]
-I
D
[A]
-5 V
1.2
-6 V
1
-4.5 V
-7 V
0.8
-4 V
-8 V
-10 V
0
0
2
4
6
8
10
0.4
0
1
2
3
4
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
4
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
3
3
25 °C
125 °C
2
-I
D
[A]
2
g
fs
[S]
1
0
0
2
4
6
8
0
1
2
3
4
1
0
-V
GS
[V]
-I
D
[A]
Rev 1.04
page 5
2011-04-05
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