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FJN4306RTA

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FJN4306RTA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

FJN4306RTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

FJN4306RTA Preview

FJN4306R
FJN4306R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=10KΩ, R
2
=47KΩ)
• Complement to FJN3306R
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-10
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
R2
B
Equivalent Circuit
C
R1
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -100µA, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -10V, I
C
= -5mA
V
CE
= -5V, I
C
= -100µA
V
CE
= -0.3V, I
C
= -1mA
7
0.19
10
0.21
-0.3
-1.4
13
0.24
5.5
200
68
-0.3
V
pF
MHz
V
V
KΩ
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJN4306R
Typical Characteristics
1000
-100
V
CE
= - 5V
R
1
= 10K
R
2
= 47K
V
I
(on)[V], INPUT VOLTAGE
V
CE
=- 0.3V
R
1
= 10K
R
2
= 47K
-10
h
FE
, DC CURRENT GAIN
100
10
-1
1
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
-10k
400
I
C
[
µ
A], COLLECTOR CURRENT
P
C
[mW], POWER DISSIPATION
V
CE
= - 5V
R
1
= 10K
R
2
= 47K
-1k
350
300
250
-100
200
150
-10
100
50
-1
-0.1
0
-0.3
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.7
-1.9
-2.1
0
25
50
o
75
100
125
150
175
V
I
(off)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJN4306R
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet Series™
Bottomless™
FAST
â
CoolFET™
FASTr™
CROSSVOLT™
FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
GTO™
2
TM
E CMOS
HiSeC™
EnSigna
TM
I
2
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™ PACMAN™
POP™
ISOPLANAR™
Power247™
LittleFET™
PowerTrench
â
MicroFET™
QFET™
MicroPak™
QS™
MICROWIRE™
QT Optoelectronics™
MSX™
Quiet Series™
MSXPro™
RapidConfigure™
OCX™
RapidConnect™
OCXPro™
â
SILENT SWITCHER
â
OPTOLOGIC
SMART START™
OPTOPLANAR™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
â
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

FJN4306RTA Related Products

FJN4306RTA FJN4306RBU
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code TO-92 TO-92
package instruction TO-92, 3 PIN TO-92, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 68 68
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
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