FJN5471BU datasheet, PDF - EEWORLD Datasheet

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FJN5471BU: DescriptionSmall Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size92KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FJN5471BU Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

FJN5471BU Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	700
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

FJN5471BU Preview

FJN5471

For Output Amplifier of Electronic Flash Unit

• High DC Currrent Gain

• Low Collector-Emitter Saturation Voltage

• High Performance at Low Supply Voltage

1

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Parameter

Ratings

40

20

7

5

0.75

150

-55 ~ 150

Units

V

A

W

°C

Electrical Characteristics

T

C

=25°C unless otherwise noted

Symbol

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE

(sat)

V

BE

(sat)

f

T

C

ob

Parameter

Collector-Emitter Voltage

Emitter Base Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Band Width Product

Collector Output Capacitance

Test Condition

I

C

=1mA, I

B

=0

I

C

=100µA, I

C

=0

V

CB

=10V, I

E

=0

V

EB

=7V, I

C

=0

V

CE

=2V, I

C

=0.5A

I

C

=3A, I

B

=0.1A

I

C

=3A, I

B

=0.1A

V

CE

=6V, I

C

=50mA

V

CB

=20V, I

E

=0, f=1MHz

150

25

700

1000

0.5

1.5

V

MHz

pF

Min.

20

7

0.1

Typ.

Max.

Units

V

µA

Thermal Characteristics

T

C

=25°C unless otherwise noted

Symbol

R

θjA

Parameter

Thermal Resistance, Junction to Ambient

Max

165

Units

°C/W

Rev. A1, August 2002

FJN5471

Typical Characteristics

7

8

V

CE

=2V

6

7

I

C

[A], COLLECTOR CURRENT

5

I

B

=12mA

I

B

=10mA

I

B

=8mA

I

B

=6mA

I

B

=4mA

4

3

I

C

[A], COLLECTOR CURRENT

I

B

=14mA

6

5

4

3

2

1

0

0.0

Ta=125 C

o

25 C

o

-40 C

o

2

I

B

=2mA

1

0

1

2

3

4

5

0.2

0.4

0.6

0.8

1.0

1.2

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

V

BE

[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Base-Emitter On Voltage

Ta=125 C

1000

o

V

CE

=2V

1

I

C

=30I

B

Ta=25 C

Ta=-40 C

o

V

CE

(sat)[V], SATURATION VOLTAGE

h

FE

, DC CURRENT GAIN

0.1

Ta=125 C

Ta=25 C

o

100

Ta=-40 C

0.01

10

0.1

1

10

100

1E-3

0.1

1

10

I

C

[A], COLLECTOR CURRENT

I

C

[A], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Collector-Emitter Saturation Voltage

10

80

V

BE

(sat)[V], SATURATION VOLTAGE

I

C

=30I

B

I

E

=0,f=1MHZ

1

Ta=-40 C

o

Ta=25 C

o

Ta=125 C

o

0.1

C

ob

[pF], OUTPUT CAPACITANCE

1

10

60

40

20

0

1

10

100

I

C

[A], COLLECTOR CURRENT

V

CB

[V], COLLECTOR-BASE VOLTAGE

Figure 5. Base-Emitter On Voltage

Figure 6. Collector Output Capacitance

Rev. A1, August 2002

FJN5471

Typical Characteristics

(Continued)

1.0

0.8

P

C

[W PO ERDISSIPATIO

], W

N

0.6

0.4

0.2

0.0

0

25

o

50

75

100

125

150

T

a

[ C], AM TTEM ATU

BIEN

PER RE

Figure 7. Power Derating

Rev. A1, August 2002

FJN5471

Rev. A1, August 2002

FJN5471

Package Dimensions

TO-92

4.58

–0.15

+0.25

0.46

14.47

±0.40

±0.10

4.58

±0.20

1.27TYP

[1.27

±0.20

]

3.60

±0.20

1.27TYP

[1.27

±0.20

]

0.38

–0.05

+0.10

3.86MAX

1.02

±0.10

0.38

–0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters

Rev. A1, August 2002

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FJN5471BU Related Products

	FJN5471BU	FJN5471TA
Description	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Is it Rohs certified?	conform to	conform to
Maker	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	700	700
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT APPLICABLE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.75 W	0.75 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT APPLICABLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz

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