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FJN598JBBU

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FJN598JBBU Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN

FJN598JBBU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionLEAD FREE, TO-92, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
FJN598J
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1
TO-92
1. Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-20
10
1
150
150
-55 ~ 150
Units
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
GDO
V
GS
(off)
I
DSS
lY
FS
l
C
ISS
C
RSS
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1µA
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
100
0.4
1.2
3.5
0.65
Min.
-20
Typ.
-0.6
Max.
-1.5
350
Units
V
V
µA
ms
pF
pF
I
DSS
Classification
Classification
I
DSS
(µA)
A
100 ~ 170
B
150 ~ 240
C
210 ~ 350
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002

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FJN598JBBU FJN598JCTA
Description Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN
Is it Rohs certified? conform to conform to
Parts packaging code TO-92 TO-92
package instruction LEAD FREE, TO-92, 3 PIN LEAD FREE, TO-92, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID) 0.001 A 0.001 A
FET technology JUNCTION JUNCTION
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON

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