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BY8104T/R

Description
DIODE 0.02 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size61KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BY8104T/R Overview

DIODE 0.02 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BY8104T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.02 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5000 V
Maximum reverse recovery time0.06 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D117
BY8100 series
Very fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of October 1994
1996 May 24
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