BT136B500T/R datasheet, PDF - EEWORLD Datasheet

BT136B500T/R: DescriptionTRIAC, 500V V(DRM), 4A I(T)RMS; CategoryAnalog mixed-signal IC Trigger device; File Size278KB，5 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BT136B500T/R Overview

TRIAC, 500V V(DRM), 4A I(T)RMS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	35 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	15 mA
JESD-609 code	e0
Maximum leakage current	0.5 mA
Maximum on-state voltage	1.7 V
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum rms on-state current	4 A
Off-state repetitive peak voltage	500 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Trigger device type	TRIAC

	BT136B500T/R	BT136B800T/R	BT136B600T/R
Description	TRIAC, 500V V(DRM), 4A I(T)RMS	TRIAC, 800V V(DRM), 4A I(T)RMS	TRIAC, 600V V(DRM), 4A I(T)RMS
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown
Critical rise rate of minimum off-state voltage	100 V/us	100 V/us	100 V/us
Maximum DC gate trigger current	35 mA	35 mA	35 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V
Maximum holding current	15 mA	15 mA	15 mA
JESD-609 code	e0	e0	e0
Maximum leakage current	0.5 mA	0.5 mA	0.5 mA
Maximum on-state voltage	1.7 V	1.7 V	1.7 V
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Maximum rms on-state current	4 A	4 A	4 A
Off-state repetitive peak voltage	500 V	800 V	600 V
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Trigger device type	TRIAC	TRIAC	TRIAC

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