FMM5052ZE
MMIC Power Amplifier
FEATURES
• Wide Frequency Band: 0.8 to 2.7GHz
• Medium Power: P1dB=26dBm (Typ.) @ f=0.8 - 2.7GHz
• High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Wide Operating Temperature Range
• Small Size: SSOP-16 Plastic Package for SMT Applications
DESCRIPTION
The FMM5052ZE is a MMIC power amplifier that includes a
three-stage amplifier, internally matched, for broadband applications in
the 0.8 to 2.7GHz frequency range. This product is uniquely suited for
use in cellular, W-CDMA/PCS, MMDS, and WLL base station amplifiers
as it offers high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
V
DD1,2
V
GG1,2
P
in
T
stg
T
op
Rating
10
-8
15
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
RECOMMENDED OPERATING CONDITIONS (Case Temperature T
c
=25°C)
Item
DC Input Voltage
Gate Current
Symbol
V
DD
V
GG
Limit
≤8
≤-3
Unit
V
V
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Linear Gain
Gain Flatness
Input Return Loss
DC Input Current
DC Input Current
CASE STYLE: ZE
Symbol
f
P
1dB
G
L
∆G
RL
in
I
DD
I
GG
Test Conditions
Min.
Limit
Typ. Max.
0.8 - 2.7
26.0
19.0
±1.0
-12
220
-2.0
-
-
±1.5
-
300
-
Unit
GHz
dBm
dB
dB
dB
mA
mA
25.0
V
DD1, 2
=8V,
V
GG1, 2
=-3V,
P
in
=-5dBm
17.0
-
-
V
DD1, 2
=8V,
V
GG1, 2
=-3V
-
-4.0
G.C.P.: Gain Compression Point
Edition 1.0
May 2003
FMM5052ZE
MMIC Power Amplifier
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
30
VDD=8V
VGG=-3V
0.8GHz
2.0, 2.7GHz
Output Power (dBm)
30
28
26
24
22
20
18
16
14
VDD=8V
VGG=-3V
28
26
Pin=10dBm
8dBm
P1dB
6dBm
Output Power (dBm)
24
22
20
18
16
14
12
2dBm
2dBm
5dBm
0.5
1
1.5
2
2.5
3
-8
-4
0
4
8
12
Frequency (GHz)
Input Power (dBm)
OUTPUT POWER vs. IMD
-24
-28
-32
RECOMMENDED TEST CIRCUIT
VDD1
VDD2
1000pF
1000pF
VDD=8V
VGG=-3V
fo =
0.8GHz
2.0GHz
2.7GHz
f=+10MHz
2-tone test
IMD (dBc)
-36
-40
-44
-48
-52
-56
-60
IM3
1000pF
56nH
20pF
IM5
1000pF
1000pF
10
12
14
16
18
20
22
24
26
VGG1
VGG2
Total Output Power (dBm)
2
FMM5052ZE
MMIC Power Amplifier
S-PARAMETERS
V
DD
= 8V, V
GG
= -3V
S21
S12
MAG
ANG
MAG
ANG
9.543
9.710
9.848
9.940
10.063
10.138
10.245
10.328
10.421
10.497
10.604
10.721
10.821
10.883
10.957
11.049
11.062
10.939
10.977
11.100
11.073
10.992
10.737
10.615
10.089
9.953
9.239
8.539
6.986
6.272
5.057
-16.7
-25.6
-33.8
-41.8
-49.6
-57.0
-64.6
-72.0
-79.7
-87.3
-94.9
-102.7
-110.9
-119.0
-127.6
-136.2
-145.6
-154.0
-162.9
-172.4
178.6
168.0
156.8
145.6
134.2
120.2
108.4
90.7
78.0
65.4
53.1
0.014
0.014
0.013
0.013
0.013
0.012
0.012
0.012
0.011
0.012
0.011
0.011
0.010
0.010
0.009
0.009
0.007
0.006
0.007
0.006
0.004
0.004
0.007
0.009
0.007
0.007
0.007
0.009
0.011
0.012
0.013
-14.9
-16.8
-22.9
-24.0
-29.2
-29.4
-32.8
-35.5
-37.7
-41.6
-56.2
-52.0
-61.3
-65.1
-66.5
-79.4
-91.3
-87.9
-102.4
-124.6
-125.3
-145.4
-169.0
174.6
149.2
157.1
136.2
126.4
126.4
112.2
97.1
FREQUENCY
(MHZ)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
S11
MAG
0.085
0.035
0.016
0.047
0.078
0.107
0.132
0.156
0.174
0.191
0.204
0.219
0.225
0.228
0.226
0.220
0.206
0.206
0.198
0.184
0.169
0.161
0.184
0.226
0.300
0.352
0.446
0.555
0.648
0.747
0.808
S22
MAG
0.269
0.221
0.180
0.149
0.123
0.104
0.084
0.071
0.057
0.047
0.040
0.030
0.029
0.031
0.040
0.061
0.092
0.108
0.129
0.167
0.204
0.249
0.290
0.330
0.359
0.396
0.428
0.460
0.456
0.413
0.442
ANG
-83.4
-75.6
22.1
54.4
56.0
55.3
51.9
48.4
44.6
40.3
36.0
31.8
27.2
22.7
19.6
16.9
15.6
17.8
17.7
18.5
25.8
38.1
53.0
63.3
64.7
67.5
67.5
64.5
57.6
50.7
42.6
ANG
114.8
112.5
111.2
110.7
111.2
112.7
114.2
113.8
117.5
116.0
115.4
111.4
102.6
85.6
69.4
50.0
29.5
17.5
14.0
9.6
6.4
0.1
-5.5
-11.4
-18.3
-22.7
-28.5
-35.3
-46.5
-43.3
-48.4
3
FMM5052ZE
MMIC Power Amplifier
Case Style "ZE"
6.40±0.5
0.70±0.3
5.00
1.5
(0.5)
0.65
(0.2)
0.70±0.3
1
16
4.55 REF
5.50
0.22±0.1
8
9
(2.7)
LEAD ASSIGNMENT
Lead
1.
2.
3.
4.
5.
6.
7.
8.
Symbol
NC
NC
NC
VDD1
RFin
NC
NC
NC
Lead
9.
10.
11.
12.
13.
14.
15.
16.
Symbol
NC
NC
NC
VGG1
VGG2
RFout/VDD2
NC
NC
0.25±0.1
1.1
–0.10
+0.20
Unit: mm
Note:
1. The dimensions in parenthesis do not include resin burrs.
2. Unless otherwise specified, the dimensional tolerance
should be
±0.15mm.
For further information please contact:
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES TD.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL: +81-55-275-4411
FAX: +81-55-275-9461
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications
without notice. The information does not convey any license under rights
of Fujitsu Limited or others.
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A.
4
(2.7)
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