RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
ISR1620C
THRU
ISR1660C
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 60 Volts CURRENT 16 Amperes
FEATURES
*
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
Low thermal resistance
High current capability
High switching capability
High surge capabitity
High reliability
.406(10.3)
.382(9.7)
.138(3.5)
.122(3.1)
.185(4.7)
.169(4.3)
.134(3.4)
.110(2.8)
ITO-220
MECHANICAL DATA
*
*
*
*
*
Case: ITo-220 molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
.114(2.9)
.098(2.5)
.602(15.3)
.579(14.7)
.154 (3.9)
.138 (3.5)
.531(13.5)
.492(12.5)
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.055(1.4)
.039(1.0)
.035(0.9)
.020(0.5)
.108(2.75)
.091(2.30)
.031(0.8)
.016 (0.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Case Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
T
STG
700
-55 to + 150
-55 to + 150
ISR1620C ISR1630C ISR1635C ISR1640C ISR1645C ISR1650C ISR1660C UNITS
20
14
20
30
21
30
35
25
35
40
28
40
16
150
3
500
45
32
45
50
35
50
60
42
60
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
0
C
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
@T
C
= 25 C
@T
C
= 100
o
C
o
SYMBOL
V
F
I
R
ISR1620C ISR1630C ISR1635C ISR1640C ISR1645C ISR1650C ISR1660C UNITS
.65
10
100
.75
Volts
mAmps
mAmps
2002-11
NOTES : 1. Thermal Resistance Junction to Case.
2. Suffix “A” = Common Anode.
3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( ISR1620C THRU ISR1660C )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
20
16
16
ISR
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT, (mA)
TC = 150
12
R1
IS
62
1.0
TC = 125
C
50
~IS
8
4
0
0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
R1
0C
1
SR
~I
64
5C
66
0C
TC = 75
.1
TC = 25
50
100
CASE TEMPERATURE, (
150
)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
175
150
125
100
75
50
25
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
.01
ISR1620C~ISR1645C
ISR1650C~ISR1660C
8.3ms Single Half Sine-Wave
(JEDED Method)
.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
4000
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
TJ = 125
JUNCTION CAPACITANCE, (pF)
2000
1000
800
600
400
ISR1620C~ISR1645C
10
TJ = 25
1.0
ISR1650C~ISR1660C
200
Pulse Width=300uS
1% Duty Cycle
100
.1
0.1
.1
.2
.3
.4
.5
.6
.7
.8
.9
INSTANTANEOUS FORWARD VOLTAGE, (V)
.4
1.0
4
10
REVERSE VOLTAGE, ( V )
40
80 100
RECTRON
Embedded System
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