PD -90825A
IRGMVC50U
INSULATED GATE BIPOLAR TRANSISTOR
WITH ON-BOARD REVERSE DIODE
Features
•
•
•
•
•
•
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Ultra Fast operation
>
10 kHz
Switching-loss rating includes all "tail" losses
Ceramic Eyelets
C
Ultra Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) max
= 3.0V
@V
GE
= 15V, I
C
= 27A
Description
n-ch an nel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
➀
Clamped Inductive Load Current
➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
TO-258AA
Max.
600
45*
27
220
180
±20
200
80
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
Units
V
A
V
W
°C
g
*Current is limited by pin diameter
Thermal Resistance
Parameter
RthJC
RthJC
RthCS
RthJA
Junction-to-Case-IGBT
Junction-to-Case-Diode
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
—
—
0.21
—
0.625
1.0
—
30
Test Conditions
°C/W
For footnotes refer to the last page
www.irf.com
1
02/20/02
IRGMVC50U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 ––– –––
V
V
GE
= 0V, I
C
= 1.0 mA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.6 –––
V/°C V
GE
= 0V, I
C
= 1.0 mA
––– ––– 3.0
I
C
= 27A
V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
––– ––– 3.25
I
C
= 45A
See Fig. 5
V
––– ––– 2.85
I
C
= 27A , T
J
= 125°C
V
GE(th)
Gate Threshold Voltage
3.0 ––– 5.5
V
CE
= V
GE
, I
C
= 250 µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C V
CE
= V
GE
, I
C
= 250 µA
g
fe
Forward Transconductance
➂
16 ––– –––
S
V
CE
= 100V, I
C
= 27A
––– ––– 250
V
GE
= 0V, V
CE
= 480V
µA
I
CES
Zero Gate Voltage Collector Current
––– ––– 5000
V
GE
= 0V, V
CE
= 480V, T
J
= 125°C
nA V
GE =
±20
I
GES
Gate-to-Emitter Leakage Current
––– ––– ±100
V
FM
Diode Forward Voltage Drop
––– ––– 1.7
I
C
= 27A
V
––– ––– 1.5
I
C
= 27A , T
J
= 125°C
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
+L
E
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
0.12
1.6
1.7
24
27
180
130
2.7
6.8
Max. Units
Conditions
140
I
C
= 27A
35
nC V
CC
= 300V
See Fig. 8
70
V
GE
= 15V
50
I
C
= 27A, V
CC
= 480V
75
V
GE
= 15V, R
G
= 2.35Ω
ns
300
Energy losses include "tail"
210
See Fig. 10, 11, 13
–––
mJ
–––
2.8
–––
T
J
= 125°C
–––
I
C
= 27A, V
CC
= 480V
ns
–––
V
GE
= 15V, R
G
= 2.35Ω
–––
Energy losses include "tail"
mJ See Fig. 11, 13
–––
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
See Fig. 7
–––
ƒ = 1.0MHz
ns
100
di/dt = 200A/µS, I
F
= 27A
VR
≤
200V
375
nC di/dt = 200A/µS, I
F
= 27A
T
J
= 125°C, VR
≤
200V
C
ies
C
oes
C
res
T
rr
Q
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Peak Reverse Recovery
Time
Diode Peak Reverse Recovery
Charge
––– 2900
––– 330
––– 41
––– –––
–––
–––
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
www.irf.com
IRGMVC50U
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRGMVC50U
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGMVC50U
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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