IRGMVC50UU datasheet, PDF - EEWORLD Datasheet

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IRGMVC50UU: DescriptionInsulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA; CategoryDiscrete semiconductor The transistor; File Size333KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGMVC50UU Overview

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA

IRGMVC50UU Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	compliant
Other features	ULTRA FAST
Shell connection	ISOLATED
Maximum collector current (IC)	45 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-258AA
JESD-30 code	R-XSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	200 W
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
VCEsat-Max	3 V

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IRGMVC50UU Related Products

	IRGMVC50UU	IRGMVC50UUPBF	IRGMVC50UD	IRGMVC50UDPBF
Description	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA
Is it Rohs certified?	incompatible	conform to	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	compliant	compliant	compliant	compliant
Other features	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	45 A	45 A	45 A	45 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	5.5 V	5.5 V	5.5 V	5.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V
JEDEC-95 code	TO-258AA	TO-258AA	TO-258AA	TO-258AA
JESD-30 code	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	200 W	200 W	200 W	200 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	3 V	3 V	3 V	3 V

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